Transport through gate-controlled graphene quantum dots

ORAL

Abstract

Quantum dots (QDs) are zero-dimensional materials formed by the confinement effect of electrons inside a potential well, resulting in a discrete energy level like atoms. Their properties can be tuned to fit advanced technologies and industrial applications; for instance, they are considered prominent candidates for qubits, the building block of a quantum computer, single electron transistors, charge sensors, and spin filters. In the framework of quantum transport we investigate the properties of graphene QD devices under the effect of a gate electrode, using numerical simulations and theoretical models: non-equilibrium green’s function (NEGF), density functional theory (DFT), and tight binding (TB).

*OCP Foundation has supported this work with the project grant AS70, "Towards phosphorene-based materials and devices, and with the support of the Chair "Multiphysics and HPC" led by Mohammed VI Polytechnic University. We acknowledge the High-Performance Computing (HPC) Facility of Mohammed VI Polytechnic University – Toubkal.

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Presenters

  • Mohamed Amine Rhanbouri

    • Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.

Authors

  • Mohamed Amine Rhanbouri

    • Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.

  • Hanan ABSIKE

    • Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.

  • Abdelouahed El Fatimy

    • Mohammed VI polytechnic University
    • Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid, Ben Guerir, 43150, Morocco.
    • Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco.
    • Institute of Applied Physics, Mohammed VI Polytechnic University, Lot 660, Hay Moulay Rachid Ben Guerir, 43150, Morocco