Magnetotransport on a 2D Electron Gas formed by a Topological Crystalline Insulator/Graphene Heterostructure

While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb_0.24Sn_0.76Te (PST) are widely investigated for spintronic applications because graphene’s high carrier mobility and PST’s topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20,000 cm²/Vs and a magnetoresistance approaching 100%, greater than either material prior to stacking. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/non-polar interface interaction. As the 2DEG does result from the topological nature of the film, it should exist regardless of the Pb/Sn ratio in the film. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of behaviors in these novel materials.