State-of-the-art Quantum Dot devices from a full 300mm process line: towards scalable spin qubit devices

ORAL

Abstract

Intel continues with its efforts towards the fabrication of spin qubit devices in a full 300mm process line. Significant progress has been achieved on the fin-based process flow that yields QD devices with performance comparable to academic’s state-of-the-art devices. Among other important milestones of this work is the implementation of fin-to-fin charge sensing which is needed to operate in the single electron regime. We will also present updates on wide linear array devices as well as the current status of spin qubit device fabrication; both are key to the long-term implementation of scalable spin qubit devices in silicon for quantum computing technology.

Presenters

  • Hubert C George

    • Components Research, Intel Corporation, Hillsboro, OR, USA
    • Components Research, Intel Corporation
    • Intel Corporation

Authors

  • Hubert C George

    • Components Research, Intel Corporation, Hillsboro, OR, USA
    • Components Research, Intel Corporation
    • Intel Corporation
  • Stephanie Bojarski

    • Components Research, Intel Corporation, Hillsboro, OR, USA
    • Components Research, Intel Corporation
    • Intel Corporation
  • Ravi Pillarisetty

    • Components Research, Intel Corporation
    • Intel Corporation
  • Brennen Mueller

    • Components Research, Intel Corporation, Hillsboro, OR, USA
    • Components Research, Intel Corporation
    • Intel Corporation
  • Lester Lampert

    • Components Research, Intel Corporation
    • Intel Corporation
  • Thomas Watson

    • Components Research, Intel Corporation
    • Intel Corporation
  • Florian Luthi

    • Components Research, Intel Corporation
    • Intel Corporation
  • Roman Caudillo

    • Components Research, Intel Corporation
    • Intel Corporation
  • David J Michalak

    • Components Research, Intel Corporation
    • Intel Corporation
  • Eric Henry

    • Components Research, Intel Corporation
    • Intel Corporation
  • Otto Zietz

    • Components Research, Intel Corporation
    • Intel Corporation
  • Jeanette Marie Roberts

    • Components Research, Intel Corporation
    • Intel Corporation
  • Anne-Marije Zwerver

    • QuTech and Kavli Institute of Nanoscience, TU Delft, The Netherlands
    • QuTech and Kavli Institute of Nanoscience
  • Tobias Krähenmann

    • QuTech and Kavli Institute of Nanoscience
  • Harmen Eenink

    • Delft University of Technology
    • QuTech and Kavli Institute of Nanoscience
  • Giordano Scappucci

    • Delft University of Technology
    • QuTech and Kavli Institute of Nanoscience
    • QuTech and Kavli Institute of Nanoscience, Delft University of Technology
    • QuTech, Delft University of Technology
    • Delft University of Technology, Delft, The Netherlands
  • Menno Veldhorst

    • Delft University of Technology
    • QuTech and Kavli Institute of Nanoscience
    • University of Twente
    • QuTech, Delft University of Technology
    • Delft University of Technology, Delft, The Netherlands
  • Lieven M Vandersypen

    • QuTech and Kavli Institute of Nanoscience, TU Delft, The Netherlands
    • QuTech and Kavli Institute of Nanoscience
    • QuTech and Kavli Institute of Nanoscience, Delft University of Technology
    • Delft University of Technology
    • Delft University of Technology, Delft, The Netherlands
  • Jim Clarke

    • Components Research, Intel Corporation, Hillsboro, OR, USA
    • Components Research, Intel Corporation
    • Intel Corporation