Strategies for <i>p-</i>type doping in ZnGeN<sub>2</sub>
ORAL
Abstract
ZnGeN2 is a direct wide-band-gap earth-abundant semiconductor that is a candidate material for optoelectronic devices. To leverage the properties of ZnGeN2 in devices requires strategies for identifying candidate dopants that can be introduced in a controlled manner. Using density functional theory with a hybrid functional, we study the role of group-III and group-I elements as candidate acceptors. We show that substitutional Al on the Ge site is the most promising acceptor, with a level 0.24 eV above the valence-band maximum, similar to the ionization energy of the Mg acceptor in GaN. However, self-compensation due to Al substitution on the Zn site is expected to be strong. We also explore the role of hydrogen complexes with the group-III elements and identify strategies for hydrogen-assisted p-type doping of ZnGeN2.
*This work is supported by ARO.
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Presenters
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Nicholas Adamski
- Department of Electrical and Computer Engineering, University of California - Santa Barbara