Dopants and Defects in Semiconductors - Nitrides
FOCUS · K11 ·
Presentations
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Identifying the source of deep defect luminescence bands in AlN and GaN: Slowly decaying DX center related emissions
Invited
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Presenters
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Klaus Thonke
- Institute of Quantum Matter / Semiconductor Physics Group, Ulm University
Authors
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Klaus Thonke
- Institute of Quantum Matter / Semiconductor Physics Group, Ulm University
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Matthias Lamprecht
- Institute of Quantum Matter / Semiconductor Physics Group, Ulm University
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Defect Level of a C-Related Center in C-Doped GaN
ORAL
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Presenters
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Subash Paudel
- Department of Physics, Univ of Alabama - Birmingham
Authors
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Subash Paudel
- Department of Physics, Univ of Alabama - Birmingham
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William Willoughby
- Department of Physics, Univ of Alabama - Birmingham
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Mary Zvanut
- Department of Physics, Univ of Alabama - Birmingham
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M. Bockowski
- Institute of High Pressure Physics Police Academy of Sciences
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M. Iwinska
- Institute of High Pressure Physics Police Academy of Sciences
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T. Sochacki
- Institute of High Pressure Physics Police Academy of Sciences
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Calcium Impurities as Nonradiative Recombination Centers in InGaN
ORAL
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Presenters
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Chris Van de Walle
- University of California, Santa Barbara
- Materials Department, Univ of California - Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials, Univ of California - Santa Barbara
- Materials Department, University of California - Santa Barbara
- Materials Department, University of California
Authors
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Jimmy Shen
- Department of Physics, University of California
- Department of Physics, Univ of California - Santa Barbara
- Materials, Univ of California - Santa Barbara
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Darshana Wickramaratne
- Materials Department, University of California, Santa Barbara
- Materials Department, University of California - Santa Barbara
- Materials Department, University of California
- Electrical and computer Science engineering, University of California Riverside
- Materials Department, Univ of California - Santa Barbara
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Chris Van de Walle
- University of California, Santa Barbara
- Materials Department, Univ of California - Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials, Univ of California - Santa Barbara
- Materials Department, University of California - Santa Barbara
- Materials Department, University of California
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Transient Hall Effect characterization of persistent photo-generated carriers in GaN/AlGaN heterostructures
ORAL
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Presenters
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David Daughton
- Lake Shore Cryotronics Inc
Authors
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David Daughton
- Lake Shore Cryotronics Inc
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BoKuai Lai
- Lake Shore Cryotronics Inc
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Jeffrey Lindemuth
- Lake Shore Cryotronics Inc
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Study of proton irradiation-induced effects on electrical and optical characteristics of AlGaN/GaN epi-structures
ORAL
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Presenters
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Min Khanal
- Auburn University
- Department of Physics, Auburn University
- Physics, Auburn University
Authors
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Min Khanal
- Auburn University
- Department of Physics, Auburn University
- Physics, Auburn University
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Kosala Yapabandara
- Auburn University
- Department of Physics, Auburn University
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Vahid Mirkhani
- Auburn University
- Physics, Auburn University
- Department of Physics, Auburn University
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Tamara Isaacs-Smith
- Physics, Auburn University
- Department of Physics, Auburn University
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Benjamin Schoenek
- Department of Physics, Auburn University
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Shiqiang Wang
- Electrical and Computer Engineering , Auburn University
- Electrical and Computer Engineering, Auburn University
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Sunil Uprety
- Department of Physics, Auburn University
- Physics, Auburn University
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Ayayi Ayhi
- Department of Physics, Auburn University
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Sarit Dhar
- Department of Physics, Auburn University
- Physics, Auburn University
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Michael Bozack
- Department of Physics, Auburn University
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Minseo Park
- Physics, Auburn University
- Department of Physics, Auburn University
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First-Principle Investigation of Vacancy Effect on the AlInN Electronic Properties
ORAL
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Presenters
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Md Golam Morshed
- Electrical and Computer Engineering, Clarkson University
Authors
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Md Golam Morshed
- Electrical and Computer Engineering, Clarkson University
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Chee-Keong Tan
- Electrical and Computer Engineering, Clarkson University
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Strategies for <i>p-</i>type doping in ZnGeN<sub>2</sub>
ORAL
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Presenters
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Nicholas Adamski
- Department of Electrical and Computer Engineering, University of California - Santa Barbara
Authors
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Nicholas Adamski
- Department of Electrical and Computer Engineering, University of California - Santa Barbara
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Darshana Wickramaratne
- Materials Department, University of California, Santa Barbara
- Materials Department, University of California - Santa Barbara
- Materials Department, University of California
- Electrical and computer Science engineering, University of California Riverside
- Materials Department, Univ of California - Santa Barbara
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Zhen Zhu
- Materials Department, University of California - Santa Barbara
- Materials, Univ of California - Santa Barbara
- University of California, Santa Barbara
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Chris Van de Walle
- University of California, Santa Barbara
- Materials Department, Univ of California - Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials, Univ of California - Santa Barbara
- Materials Department, University of California - Santa Barbara
- Materials Department, University of California
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Native Defects and Impurities in the Wide Band Gap II-IV Nitride MgSiN<sub>2</sub>
ORAL
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Presenters
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Mikael Rasander
- Imperial College London
Authors
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Mikael Rasander
- Imperial College London
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Michelle Moram
- University of Cambridge
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Defects and doping in ZnGeN<sub>2</sub>: interstitials and <i>p</i>-type candidates
ORAL
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Presenters
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Dmitry Skachkov
- Physics, Case Western Reserve University
Authors
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Dmitry Skachkov
- Physics, Case Western Reserve University
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Walter Lambrecht
- Physics, Case Western Reserve University
- Department of Physics, Case Western Reserve University
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Strain Effects: Properties of Deep Defects in Hexagonal Boron Nitride
ORAL
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Presenters
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Olasunbo Farinre
- Physics and Astronomy, Howard University
Authors
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Olasunbo Farinre
- Physics and Astronomy, Howard University
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Evan Folk
- Department of Physics, University of Nebraska
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Pratibha Dev
- Physics and Astronomy, Howard University
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Cubic Boron Nitride on Semiconducting Diamond and its Application to Neutron Detection
ORAL
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Presenters
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Jesse Brown
- Arizona State Univ
Authors
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Jesse Brown
- Arizona State Univ
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Yu Yang
- Arizona State University
- Arizona State Univ
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Joseph Shammas
- Arizona State Univ
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David Smith
- Arizona State Univ
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Franz Koeck
- Arizona State University
- Arizona State Univ
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Robert Nemanich
- Arizona State Univ
- Arizona State University
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Predicting properties of Zn<sub>1+x</sub>Sn<sub>1-x</sub>N<sub>2-2x</sub>O<sub>2x</sub>: defects and disorders
ORAL
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Presenters
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Jie Pan
- Natl Renewable Energy Lab
Authors
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Jie Pan
- Natl Renewable Energy Lab
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Jacob Cordell
- Natl Renewable Energy Lab
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Andriy Zakutayev
- National Renewable Energy Laboratory
- Colorado School of Mines
- Natl Renewable Energy Lab
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Stephan Lany
- National Renewable Energy Laboratory
- Natl Renewable Energy Lab
- NREL
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Defects in N-Rich, Si-Rich, and Stoichiometric Silicon Nitride Thin Films Observed Using Electrically Detected Magnetic Resonance and Near-Zero Field Magnetoresistance
ORAL
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Presenters
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Ryan Waskiewicz
- Pennsylvania State University
- Engineering Science and Mechanics, Pennsylvania State Univ
- Engineering Science and Mechanics, Pennsylvania State University
Authors
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Ryan Waskiewicz
- Pennsylvania State University
- Engineering Science and Mechanics, Pennsylvania State Univ
- Engineering Science and Mechanics, Pennsylvania State University
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Michael Mutch
- Micron Technologies
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Patrick Lenahan
- Pennsylvania State University
- Engineering Science and Mechanics, Pennsylvania State Univ
- Engineering Science and Mechanics, Pennsylvania State University
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Sean King
- Intel Corporation
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