Modification of a scanning electron microscope (SEM) for insitu, nanometer size contact, electrical measurements of III-nitride transistors

As the transistors become smaller and smaller, proximity effects become important, therefore there is a need for characterization instruments. We modified a scanning electron microscope (SEM) by adding the capability to make mechanical contacts to devices for electrical measurements with nanometer precision. We will discuss ongoing work involving III-nitride transistors and nanowires.