Diffusion of H in In2O3 single crystals

An IR absorption line observed at 3306 cm$^{-1}$ for In$_{2}$O$_{3}$ single crystals annealed in an H$_{2}$ ambient has been assigned to an interstitial hydrogen center that acts as a shallow donor [1]. Experiments have been performed to determine the indiffusion depth of interstitial H into In$_{2}$O$_{3}$ at temperatures near 400 \textdegree C. We have also performed annealing experiments in which the outdiffusion of interstitial H is monitored by IR spectroscopy. The goal of these studies is to determine the diffusion constant of interstitial H in In$_{2}$O$_{3}$ over a range of temperatures so that the activation energy for diffusion can be determined. [1] W. Yin et al., Phys. Rev. B 91, 075208 (2015).