Quantum transport measurement of few-layer WTe2 field effect devices
ORAL
Abstract
We have performed systematic quantum transport measurement on field effect devices fabricated from few-layer WTe2 single crystals. We found that the magnetoresistance of few-layer WTe2 could be very different from that of bulk samples, which may arise from the imbalance of electron and hole carriers in the samples. We shall discuss our findings in more details in light of recent progress in our experiment.
*This work is supported by National Natural Science Foundation of China (11374021 and 11327406); by China Ministry of Science and Technology under Contract \# 2014CB920900 and 2013CB921900; and by the Young 1000-Talent Program of China
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Authors
Jianhao Chen
International Center for Quantum Materials, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing, China
Xin Liu
International Center for Quantum Materials, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing, China
Shibing Tian
International Center for Quantum Materials, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing, China
Chenglong Zhang
International Center for Quantum Materials, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing, China
Shuang Jia
International Center for Quantum Materials, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing, China
