Visualization of Photo-induced Doping patterns in Graphene/Boron Nitride Heterostructures via Scanning Tunneling Microscopy

ORAL

Abstract

Photo-induced doping in graphene-boron nitride (G/BN) heterostructures enables flexible and repeatable writing and erasing of charge doping in graphene using optical irradiation. So far, however, this phenomenon has been explored using spatially averaging probes such as electron transport, and there have been no local studies into the underlying microscopic behavior. Here we report a combined scanning tunneling microscopy (STM) and optoelectronic measurement scheme that has been utilized to investigate the microscopic mechanisms at work in this process. We will discuss the latest experimental progress towards the visualization of light-induced charge doping patterns on G/BN heterostructures via STM.

*J.V.J acknowledges support from the UC President's Postdoctoral Fellowship

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Authors

  • Jairo Velasco Jr.

    • University of California at Berkeley
    • UC Berkeley

  • Long Ju

    • University of California at Berkeley

  • Dillon Wong

    • University of California at Berkeley

  • Juwon Lee

    • University of California at Berkeley

  • Salman Kahn

    • University of California at Berkeley

  • Hsin-Zon Tsai

    • University of California at Berkeley

  • Chad Germany

    • University of California at Berkeley

  • Takashi Taniguchi

    • NIMS

  • Kenji Watanabe

    • NIMS

  • Alex Zettl

    • University of California at Berkeley

  • Feng Wang

    • University of California at Berkeley

  • Mike Crommie

    • University of California at Berkeley