Tunability of Band Gap in Multilayer Phosphorene by External Electric Fields and Electron Dopings

ORAL

Abstract

Black phosphorus (BP) and its two-dimensional derivative phosphorene are rapidly emerging nanoelectronic materials with potential applicability to field effect transistors and optoelectronic devices. Unlike the gapless semiconductor graphene, multilayer BP has a substantial band gap of $\sim$ 0.2 eV and the band-gap size is reportedly varied by external electric fields. To explore the extensibility of such band-gap modulation, we have investigated electronic band structures of multilayer BP by using the first-principles density-functional method as implemented in the SIESTA code. By controlling the electron doping concentrations and the resultant electric fields therefrom, we examine the manageability of the band-gap size and the anisotropic carrier mobility. This work was supported by NRF of Korea (Grant No. 2011-0018306) and KISTI supercomputing center (Project No. KSC-2013-C3-062).

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Authors

  • Seung Su Baik

    • Center for Computational Studies of Advanced Electronic Material Properties (CCSAEMP) and Department of Physics, Yonsei University, Korea

  • Hyoung Joon Choi

    • Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University
    • Department of Physics, IPAP, and Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul, Korea
    • Center for Computational Studies of Advanced Electronic Material Properties (CCSAEMP) and Department of Physics, Yonsei University, Korea