Focus Session: Beyond Graphene Devices: Function, Fabrication, and Characterization I
FOCUS · D51 ·
Presentations
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High-Performance n-type and p-type WSe$_{2}$ Field Effect Transistors with Ionic-Liquid Gated Graphene Electrodes
ORAL
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Authors
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Hsun Jen Chuang
- Wayne State University
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Xuebin Tan
- Wayne State University
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Mark Ming-Cheng Cheng
- Wayne State University
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Nirmal Jeevi Ghimire
- University of Tennessee
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Jiaqiang Yan
- University of Tennessee
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David Mandrus
- University of Tennessee
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Bhim Chamlagain
- Wayne State University
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Meeghage Madusanka Perera
- Wayne State University
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Zhixian Zhou
- Wayne State University
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Contacts and transport characteristics of few-layer transition metal dichalcogenides
ORAL
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Authors
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Junjie Wang
- Penn State University, University Park, Pennsylvania 16802, USA
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Jing Li
- Penn State University, University Park, Pennsylvania 16802, USA
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Jacob Shevrin
- Penn State University, University Park, Pennsylvania 16802, USA
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An Nguyen
- Penn State University, University Park, Pennsylvania 16802, USA
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Tom Mallouk
- Penn State University, University Park, Pennsylvania 16802, USA
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J. Zhu
- Penn State University, University Park, Pennsylvania 16802, USA
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Daniel Rhodes
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
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Luis Balicas
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, USA
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K. Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Japan
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T. Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Japan
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Effect of interfaces on electron transport properties of MoS2--Au Contacts
ORAL
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Authors
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Maral Aminpour
- University of Central Florida
- University of Central Florida, Department of Physics, Orlando FL 32816-2385, USA
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Prokop Hapala
- Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53, Prague, Czech Republic
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Duy Le
- Department of Physics, University of Central Florida
- Department of Physics, University of Central Florida, Orlando, FL
- University of Central Florida, Department of Physics, Orlando FL 32816-2385, USA
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Pavel Jelinek
- Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53, Prague, Czech Republic
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Talat S. Rahman
- University of Central Florida
- University of Central Florida, Department of Physics, Orlando FL 32816-2385, USA
- Department of Physics, University of Central Florida
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to be determined by you
COFFEE_KLATCH · Invited
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Authors
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Ali Javey
- UC Berkeley
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Vertical Field-Effect Transistor Based on Graphene-Transition Metal Dichalcogenides Heterostructures
ORAL
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Authors
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Jatinder Kumar
- University of Kansas
- Physics and Astronomy, University of Kansas, Lawrence, KS
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Hui-Chun Chien
- Physics and Astronomy, University of Kansas, Lawrence, KS
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Matthew Z. Bellus
- Physics and Astronomy, University of Kansas, Lawrence, KS
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David L. Sicilian
- Physics and Astronomy, University of Kansas, Lawrence, KS
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Davis St. Aubin
- Physics and Astronomy, University of Kansas, Lawrence, KS
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Hsin-Ying Chiu
- Physics and Astronomy, University of Kansas, Lawrence, KS
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High performance MoS$_{2}$ Field-Effect Transitors in a simple design
ORAL
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Authors
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S. Velez
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain
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O. Txoperena
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain
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L. Pietrobon
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain
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F. Casanova
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain and IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country, Spain
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L.E. Hueso
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain and IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Basque Country, Spain
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MoS$_{2}$ Field-effect Transistors with Graphene/Metal Hetero-contacts
ORAL
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Authors
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Yuchen Du
- Purdue University
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Lingming Yang
- Purdue University
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Jingyun Zhang
- Purdue University
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Nathan Conrad
- Purdue University
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Han Liu
- Purdue University
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Peide Ye
- Purdue University
- Birck Nanotechnology Center and Electrical and Computer Engineering, Purdue University
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Electrical transport measurements on monolayer and few-layer MoSe2 and WSe2
ORAL
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Authors
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Zaiyao Fei
- Univ of Washington
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Joe Finney
- Univ of Washington
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Yun Ling
- Univ of Washington
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Serkan Kasirga
- Univ of Washington
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Xiaodong Xu
- Univ of Washington
- University of Washington
- Department of Physics, University of Washington
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David Cobden
- University of Washington
- univ of washington
- Univ of Washington
- Department of Physics, University of Washington
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Improved Carrier Mobility in Few-Layer MoS$_{2}$ Field-Effect Transistors with Ionic-Liquid Gating
ORAL
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Authors
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Meeghage Perera
- Wayne State University
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Ming-Wei Lin
- Wayne State University
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Hsun-Jen Chuang
- Wayne State University
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Bhim Chamlagain
- Wayne State University
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Chongyu Wang
- Wayne State University
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Xuebin Tan
- Wayne State University
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Mark Cheng
- Wayne State University
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David Tom\'anek
- Michigan State University
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Zhixian Zhou
- Wayne State University
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Electronic properties of few-layer MoS2 under an external electrical field
ORAL
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Authors
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Jose Eduardo Padilha
- University of California Santa Barbara
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Hartwin Peelaers
- Materials Department, University of California, Santa Barbara, California 93106-5050
- University of California Santa Barbara
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Anderson Janotti
- University of California, Santa Barbara
- University of California Santa Barbara
- Univ of California - Santa Barbara
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Chris Van de Walle
- University of California, Santa Barbara
- University of California Santa Barbara
- Univ of California - Santa Barbara
- Matrials Department, University of California, Santa Barabara
- Materials Department, University of California, Santa Barbara, California 93106-5050
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Photocurrent studies on multi-walled WS$_{2}$ nanotube devices
ORAL
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Authors
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John Mathew
- DCMP\&MS, Tata Institute of Fundamental Research, Mumbai, India
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Gobinath Jegannathan
- DCMP\&MS, Tata Institute of Fundamental Research, Mumbai, India
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Sameer Grover
- DCMP\&MS, Tata Institute of Fundamental Research, Mumbai, India
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Sudipta Dubey
- DCMP\&MS, Tata Institute of Fundamental Research, Mumbai, India
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Pratiksha Dongare
- DCMP\&MS, Tata Institute of Fundamental Research, Mumbai, India
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Mandar Deshmukh
- Tata Institute of Fundamental Research, Mumbai, India
- Department of Condensed Matter Physics and Materials science, Tata Institute of Fundamental Research, Mumbai
- DCMP\&MS, Tata Institute of Fundamental Research, Mumbai, India
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Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers
ORAL
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Authors
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Junhao Lin
- Vanderbilt University
- Vanderbilt Univ
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Ovidiu Cretu
- National Institute of Advanced Industrial Science and Technology (AIST)
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Wu Zhou
- Oak Ridge National Lab
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Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST)
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Dhiraj Prasai
- Vanderbilt Univ
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Kirill Bolotin
- Vanderbilt Univ
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Nguyen Cuong
- National Institute of Advanced Industrial Science and Technology (AIST)
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Minoru Otani
- National Institute of Advanced Industrial Science and Technology (AIST)
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Susumu Okada
- University of Tsukuba
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Andrew Lupini
- Oak Ridge National Lab
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Juan Idrobo
- Oak Ridge National Lab
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Dave Caudel
- Vanderbilt Univ
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Arnold Burger
- Fisk University
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Jiaqiang Yan
- University of Tennessee
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Nirmal Ghimire
- Oak Ridge National Lab
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David Mandrus
- University of Tennessee
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Stephen Pennycook
- Oak Ridge National Lab
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Sokrates Pantelides
- Vanderbilt Univ
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Interface effect on multilayer tungsten disulfide device caused by substrate and water molecule
ORAL
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Authors
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Xue Liu
- Tulane University
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Yun Ling
- Jiangsu University
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Jin Hu
- Tulane University
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Chunlei Yue
- Tulane University
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Zhiqiang Mao
- Tulane University
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Jiang Wei
- Tulane University
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