Focus Session: Dopants and Defects in Semiconductors - Nitrides
FOCUS · B28 ·
Presentations
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Optical signatures of defects in nitride semiconductors
COFFEE_KLATCH · Invited
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Authors
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Andrew Armstrong
- Sandia National Laboratories
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Shallow versus deep nature of Mg acceptors in nitride semiconductors
ORAL
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Authors
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John Lyons
- Materials Department, University of California, Santa Barbara
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Anderson Janotti
- University of California, Santa Barbara
- Materials Department, University of California, Santa Barbara
- University of California Santa Barbara
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C.G. Van de Walle
- Materials Department, University of California, Santa Barbara
- Materials Department, University of California Santa Barbara
- University of California, Santa Barbara
- Materials Department, University of California Santa Barbara, CA 93106-5050
- Materials Department, University of California at Santa Barbara
- Materials Department, University of California, Santa Barbara, California, CA
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Effect of Doping Profile and Concentration on the Near-Infrared Optical Properties of AlGaN/GaN and AlInN/GaN Heterostructures
ORAL
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Authors
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Mayra Cervantes
- Purdue University
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Colin Edmunds
- Purdue University
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Donghui Li
- Purdue University
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Liang Tang
- Purdue University
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Jiayi Shao
- Purdue University
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Geoff Gardner
- Birck Nanotechnology Center and School of Materials Engineering, Purdue University
- Purdue University
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Michael Manfra
- Department of Physics, Birck Nanotechnology Center and Schools of Materials and Electrical and Computer Engineering, Purdue University
- Dept. of Physics, Birck Nano Center, and Schools of Materials Engineering and Electrical and Computer Engineering, Purdue University
- Purdue University
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Oana Malis
- Purdue University
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Field-enhanced vacancy diffusion in AlGaN
ORAL
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Authors
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Keith H. Warnick
- Dept. of Physics and Astronomy, Vanderbilt University
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Yevgeniy Puzyrev
- Dept. of Physics and Astronomy, Vanderbilt University
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Tania Roy
- Dept. of Electrical Engineering and Computer Science, Vanderbilt University
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Daniel M. Fleetwood
- Dept. of Electrical Engineering and Computer Science, Dept. of Physics and Astronomy, Vanderbilt University
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Ronald D. Schrimpf
- Dept. of Electrical Engineering and Computer Science, Vanderbilt University
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Sokrates T. Pantelides
- Dept. of Physics and Astronomy, Vanderbilt University; Materials Science and Technology Division, Oak Ridge National Laboratory
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Role of native defects and related complexes in absorption and luminescence of AlN
ORAL
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Authors
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Qimin Yan
- Materials Department, University of California at Santa Barbara
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Anderson Janotti
- University of California, Santa Barbara
- Materials Department, University of California Santa Barbara
- Materials Department, University of California, Santa Barbara
- Materials Department, University of California at Santa Barbara
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Matthias Scheffler
- Fritz-Haber-Institut der MPG, D-14195 Berlin
- Fritz-Haber-Institut der MPG
- Fritz Haber Institute of the Max Planck Society
- Fritz-Haber-Institut der Max-Planck-Gesellschaft
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C.G. Van de Walle
- Materials Department, University of California, Santa Barbara
- Materials Department, University of California Santa Barbara
- University of California, Santa Barbara
- Materials Department, University of California Santa Barbara, CA 93106-5050
- Materials Department, University of California at Santa Barbara
- Materials Department, University of California, Santa Barbara, California, CA
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Effective mass calculations for shallow acceptors in nitrides
ORAL
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Authors
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Jacob Emmert-Aronson
- CWRU
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W.R.L. Lambrecht
- CWRU
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Evidence for mobile electrons in p-type GaN:Mg
ORAL
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Authors
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Mary Ellen Zvanut
- University of Alabama at Birmingham
- University of Alabama
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William Willoughby
- University of Alabama at Birmingham
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A Combined Excitation Experiment and the Emission Nature of Eu in GaN
ORAL
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Authors
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Jonathan Poplawsky
- Physics Department, Lehigh University
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Atsushi Nishikawa
- Division of Materials and Manufacturing Sciences, Osaka University
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Yasufumi Fujiwara
- Division of Materials and Manufacturing Sciences, Osaka University
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Volkmar Dierolf
- Physics Department, Lehigh University
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Magneto-Optical Studies of Rare Earth Doped III-V Nitrides
ORAL
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Authors
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Brandon Mitchell
- Lehigh University
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Nathaniel Woodward
- Lehigh University
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Jonathan Poplawsky
- Lehigh University
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Volkmar Dierolf
- Lehigh University
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H.X. Jiang
- Texas Tech Institute
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Origins of Persistent Photoconductivity in Highly Mismatched Semiconductor Alloys
ORAL
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Authors
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R.L. Field III
- Department of Physics, University of Michigan
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G. Vardar
- Department of Materials Science and Engineering, University of Michigan
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Y. Jin
- Department of Physics, University of Michigan
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T. Dannecker
- Tyndall National Institute, University College Cork
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Y.Q. Wang
- Materials Science and Technology Division, Los Alamos National Laboratory
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C. Kurdak
- Department of Physics, University of Michigan
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R.S. Goldman
- Department of Materials Science and Engineering, University of Michigan
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Influence of excitation frequency on A$_{1}$(LO) and E$_{2}$ Raman modes in In rich In$_{1-x}$Ga$_{x}$N thin films
ORAL
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Authors
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Ambesh Dixit
- Indian Institute of Technology, Rajasthan, India
- IIT Rajasthan, India
- Wayne State University (Current IIT Rajasthan, India)
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Jagdish S. Thakur
- Wayne State University
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Ratna Naik
- Wayne State University, MI
- Wayne State University
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V.M. Naik
- University of Michigan-Dearborn
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Defect and Impurity Properties of Hexagonal Boron-nitride
ORAL
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Authors
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Bing Huang
- National Renewable Energy Lab
- National Renewable Energy Laboratory
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Su-Huai Wei
- national renewable energy laboratory
- National Renewable Energy Lab
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Non-linear piezoelectric polarization in III-V and nitride semiconductors
ORAL
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Authors
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Pierre-Yves Prodhomme
- Max-Planck-Institut f\"ur Festk\"orperforschung
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Annie Beya-Wakata
- Max-Planck-Institut f\"ur Festk\"orperforschung
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Gabriel Bester
- Max Planck Institute for Solid State Research
- Max-Planck-Institut f\"ur Festk\"orperforschung
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