Heteroepitaxial Graphene on a Si Substrate Field-Effect Transistor

ORAL

Abstract

Electronic and optoelectronic properties of the graphene-backgate transistor are presented. Our transistor was fabricated on graphene film heteroepitaxially formed by the thermal decomposition on the surface of 3C-SiC grown on a Si substrate by organo-silane gas source molecular beam epitaxy. The film consists of a few graphene layers. Although some gate leakage current is observed, the experimental results show that our device works as an n-type transistor as well as an infrared photovoltaic transistor. The graphene channel saturated current is on the order of mA/mm. The estimated effective mobility has its maximum over 6000 cm$^{2}$/(Vs). The photo-responsivity can be achieved up to mA/W. The backgate voltage tuning spectral characteristic is also observed. Heteroepitaxial graphene is a promising material for post-Si CMOS applications.

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Authors

  • Roman Olac-vaw

    • Electrical Engineering Department, University at Buffalo, Buffalo, NY USA

  • Hyun Chul Kang

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Tsuneyoshi Komori

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Tatayuki Watanabe

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Hiromi Karasawa

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Yu Miyamoto

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Hiroyuki Handa

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Hirokazu Fukidome

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Tetsuya Suemitsu

    • JST-CREST, Japan Science and Technology Agency, Tokyo, Japan

  • Maki Suemitsu

    • JST-CREST, Japan Science and Technology Agency, Tokyo, Japan

  • Vladimir Mitin

    • Electrical Engineering Department, University at Buffalo, Buffalo, NY USA
    • Electrical Engineering Department, University at Buffalo
    • University at Buffalo

  • Taiichi Otsuji

    • JST-CREST, Japan Science and Technology Agency, Tokyo, Japan