Focus Session: Graphene: Field-Effect Devices

Presentations

• FET device with suspended graphene

  ORAL

  March 19, 2010, 8:00 AM – March 19, 2010, 8:12 AM

  Authors

  • Jian Ming Lu

  • Zikang Tang

    • The Hong Kong University of Science and Technology

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• Graphene field-effect transistors built with graphene-oxide gate dielectric

  ORAL

  March 19, 2010, 8:12 AM – March 19, 2010, 8:24 AM

  Authors

  • Brian Standley

    • California Institute of Technology

  • Anthony Mendez

    • California Institute of Technology

  • Emma Schmidgall

    • Imperial College London

  • Marc Bockrath

    • University of California Riverside
    • University of California, Riverside

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• High mobility monolayer graphene over a 150mm substrate

  ORAL

  March 19, 2010, 8:24 AM – March 19, 2010, 8:36 AM

  Authors

  • Jinseong Heo

    • Samsung Advanced Institute of Technology

  • Yun Sung Woo

    • Samsung Advanced Institute of Technology

  • David H. Seo

    • Samsung Advanced Institute of Technology

  • Hyun-Jong Chung

    • Samsung Advanced Institute of Technology

  • Sunae Seo

    • Samsung Advanced Institute of Technology

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• Charge transport in graphene field effect transistors with ferroelectric gating

  COFFEE_KLATCH · Invited

  March 19, 2010, 8:36 AM – March 19, 2010, 9:12 AM

  Authors

  • Barbaros \"Ozyilmaz

    • NanoCore and Physics Department, National University of Singapore, Singapore

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• Novel Graphene Devices by Precision Transfer Method

  ORAL

  March 19, 2010, 9:12 AM – March 19, 2010, 9:24 AM

  Authors

  • Cory Dean

    • Columbia University

  • Inanc Meric

    • Columbia University

  • Andrea Young

    • Columbia University

  • Changgu Lee

    • Columbia University

  • Natalia Baklitskaya

    • Columbia University

  • Philip Kim

    • Columbia University

  • Jim Hone

    • Columbia University

  • Ken Shepard

    • Columbia University

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• Capacitance of graphenes

  ORAL

  March 19, 2010, 9:24 AM – March 19, 2010, 9:36 AM

  Authors

  • Andrea Young

    • Columbia University
    • Columbia

  • Cory Dean

    • Columbia University

  • Inanc Meric

    • Columbia University

  • Jim Hone

    • Columbia University

  • Ken Shepard

    • Columbia University

  • Philip Kim

    • Columbia University

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• Temperature-Dependent Subthreshold Characteristics in Graphene Nanoribbon Tunneling Transistors

  ORAL

  March 19, 2010, 9:36 AM – March 19, 2010, 9:48 AM

  Authors

  • Youngki Yoon

    • University of California, Berkeley

  • Sayeef Salahuddin

    • University of California, Berkeley

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• Effect of SiO$_{2}$ surface treatment on graphene transistors fabricated on Si:SiO$_{2}$ substrates using a lithography free process

  ORAL

  March 19, 2010, 9:48 AM – March 19, 2010, 10:00 AM

  Authors

  • Prasoon Joshi

  • Vijay Toutam

  • Srinivas Tadigadapa

    • Department Of Electrical Engineering, Penn State University

  • Adam Neal

    • Department Of Electrical Engineering, Purdue University

  • Humberto Gutierrez

    • Physics Department, Penn State University
    • Department Of Physics, Penn State University

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• Graphite based Schottky diodes formed semiconducting substrates

  ORAL

  March 19, 2010, 10:00 AM – March 19, 2010, 10:12 AM

  Authors

  • T. Schumann

    • University of Florida

  • Sefaattin Tongay

    • University of Florida

  • Arthur Hebard

    • University of Florida
    • Department of physics, University of Florida

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• Local Ambipolar Graphene Field Effect Transistors via Metal Side Gates

  ORAL

  March 19, 2010, 10:12 AM – March 19, 2010, 10:24 AM

  Authors

  • Jifa Tian

    • Institute of Physics, Chinese Academy of Sciences

  • Luis Jauregui

  • Gabriel Lopez

  • Helin Cao

  • Yong Chen

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• Optimization of Graphene Field-Effect Transistors for RF Applications

  ORAL

  March 19, 2010, 10:24 AM – March 19, 2010, 10:36 AM

  Authors

  • Hsin-Ying Chiu

    • IBM T. J. Watson Research Center

  • Yu-Ming Lin

    • IBM T. J. Watson Research Center

  • Keith A. Jenkins

    • IBM T. J. Watson Research Center

  • Damon Farmer

    • IBM T. J. Watson Research Center
    • IBM Thomas J. Watson Research Center

  • Alberto Valdes-Garcia

    • IBM T. J. Watson Research Center

  • Phaedon Avouris

    • IBM T. J. Watson Research Center
    • IBM T.J. Watson Research Center
    • IBM - Watson
    • IBM Thomas J. Watson Research Center
    • IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA

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• Heteroepitaxial Graphene on a Si Substrate Field-Effect Transistor

  ORAL

  March 19, 2010, 10:36 AM – March 19, 2010, 10:48 AM

  Authors

  • Roman Olac-vaw

    • Electrical Engineering Department, University at Buffalo, Buffalo, NY USA

  • Hyun Chul Kang

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Tsuneyoshi Komori

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Tatayuki Watanabe

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Hiromi Karasawa

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Yu Miyamoto

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Hiroyuki Handa

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Hirokazu Fukidome

    • Research Institute of Electrical Communication, Tohoku University, Sendai, Japan

  • Tetsuya Suemitsu

    • JST-CREST, Japan Science and Technology Agency, Tokyo, Japan

  • Maki Suemitsu

    • JST-CREST, Japan Science and Technology Agency, Tokyo, Japan

  • Vladimir Mitin

    • Electrical Engineering Department, University at Buffalo, Buffalo, NY USA
    • Electrical Engineering Department, University at Buffalo
    • University at Buffalo

  • Taiichi Otsuji

    • JST-CREST, Japan Science and Technology Agency, Tokyo, Japan

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• Scanning Tunneling Microscopic Studies of Dielectric Gate Materials on Graphene

  ORAL

  March 19, 2010, 10:48 AM – March 19, 2010, 11:00 AM

  Authors

  • M.L. Teague

    • Dept. of Physics, Caltech, Pasadena, CA 91125
    • Phys. Dept., Caltech, Pasadena, CA 91125

  • T.-P. Wu

    • Dept. of Physics, Caltech, Pasadena, CA 91125

  • M.W. Bockrath

    • Dept. of Physics, Caltech, Pasadena, CA 91125

  • N.-C. Yeh

    • Dept. of Physics, Caltech, Pasadena, CA 91125

  • C.N. Lau

    • Dept. of Physics, UC Riverside, Riverside, CA 92521

  View abstract →