Computational Study of Semiconductor Band Structures

Presentations

• First-Principles determination of deformation potentials in nitrides

  ORAL

  March 18, 2009, 8:00 AM – March 18, 2009, 8:12 AM

  Authors

  • Qimin Yan

  • Patrick Rinke

  • Matthias Scheffler

  • Chris G. Van de Walle

    • University of California at Santa Barbara

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• Band-gap bowing, band offsets, and electron affinity for InGaN alloys: A DFT study.

  ORAL

  March 18, 2009, 8:12 AM – March 18, 2009, 8:24 AM

  Authors

  • Poul Moses

    • UCSB

  • Chris Van de Walle

    • Materials Department, University of California, Santa Barbara, CA 93106-5050
    • Materials Department, University of California, Santa Barbara
    • University of California, Santa Barbara
    • Materials Department, University of California Santa Barbara
    • UCSB
    • Chris Van de Walle, University of California, Santa Barbara
    • Materials Department, University of California at Santa Barbara

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• A Hybrid Look at Band Offsets in AlN/GaN Heterostructures

  ORAL

  March 18, 2009, 8:24 AM – March 18, 2009, 8:36 AM

  Authors

  • Jeremy Nicklas

  • John Wilkins

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• Reassessing the Description of the Electronic Structure of a Semiconductor Alloy

  ORAL

  March 18, 2009, 8:36 AM – March 18, 2009, 8:48 AM

  Authors

  • Yong Zhang

    • National Renewable Energy Laboratory

  • A. Mascarenhas

    • National Renewable Energy Laboratory
    • National Renewable Energy Laboratory, 1617 Cole Blvd, Golden CO-80401

  • L.-W. Wang

    • Lawrence Berkeley National Laboratory

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• \textit{Ab initio} study of the optical properties of Si-XII

  ORAL

  March 18, 2009, 8:48 AM – March 18, 2009, 9:00 AM

  Authors

  • Brad Malone

    • Department of Physics, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory

  • Jay Sau

    • Department of Physics, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory

  • Marvin L. Cohen

    • The department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory
    • UC Berkeley, Lawrence Berkeley National Labratory
    • University of California Berkeley
    • Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
    • Department of Physics, University of California, Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory
    • Department of Physics, University of California at Berkeley and Materials Sciences Division of Lawrence Berkeley National Laboratory
    • Physics Dept, UC Berkeley
    • University of California, Berkeley and MSD, Lawrence Berkeley National Laboratory

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• First-Principles Hartree-Fock Study of Locations and Hyperfine Interactions of Transition Metal Impurities in Silicon

  ORAL

  March 18, 2009, 9:00 AM – March 18, 2009, 9:12 AM

  Authors

  • R.H. Pink

    • SUNY Albany

  • S.R. Badu

    • SUNY Albany

  • Archana Dubey

    • UCF Orlando

  • R.H. Scheicher

    • Uppsala University, Sweden
    • CMT Group, Uppsala
    • Condensed Matter Theory Group, Department of Physics and Materials Science, Uppsala University, Box 530, SE-751 21, Uppsala Sweden

  • Lee Chow

    • UCF Orlando

  • M.B. Huang

    • SUNY Albany

  • T.P. Das

    • SUNY Albany
    • SUNY Albany, UCF Orlando

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• Theoretical analysis on the effect of tip-induced band bending on scanning tunneling spectroscopy measurements on H-terminated Si(100) surface

  ORAL

  March 18, 2009, 9:12 AM – March 18, 2009, 9:24 AM

  Authors

  • Hideomi Totsuka

    • totsuka.hideomi@nihon-u.ac.jp

  • Satoshi Watanabe

    • Dept. of Materials Engineering, The Univ. of Tokyo
    • watanabe@cello.t.u-tokyo.ac.jp

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• Band gaps and band offsets in the SiO$_2$/Si interface calculated by including the self-energy of electrons and holes

  ORAL

  March 18, 2009, 9:24 AM – March 18, 2009, 9:36 AM

  Authors

  • Luiz Ferreira

    • Universidade de S\~ao Paulo, Brazil

  • Leonardo Fonseca

    • Center Wernher von Braun for Advanced Research, Brazil

  • Mauro Ribeiro, Jr.

    • Center Wernher von Braun for Advanced Research, Brazil

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• The influence of pressure on defects in amorphous silicon

  ORAL

  March 18, 2009, 9:36 AM – March 18, 2009, 9:48 AM

  Authors

  • Jeff Grossman

    • Universtiy of California Berkeley
    • University of California, Berkeley
    • University of California at Berkeley

  • Lucas Wagner

    • University of California, Berkeley

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• Ab initio calculations of the dielectric functions of semiconductors and alloys including excitonic effect via LASTO method

  ORAL

  March 18, 2009, 9:48 AM – March 18, 2009, 10:00 AM

  Authors

  • Hyejung Kim

    • Department of Physics, University of Illinois at Urbana-Champaign, Urbana IL and Research center for Applied Sciences, Academia Sinica, Taipei, Taiwan

  • Yia-Chung Chang

    • Department of Physics, University of Illinois at Urbana-Champaign, Urbana IL and Research center for Applied Sciences, Academia Sinica, Taipei, Taiwan

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• The Electronic and Optical Properties of Manganese-doped Wurtzite ZnO

  ORAL

  March 18, 2009, 10:00 AM – March 18, 2009, 10:12 AM

  Authors

  • Yiming Mi

    • School of Fundamental Studies, Shanghai University of Engineering Science

  • Xinxin Zhao

    • School of Fundamental Studies, Shanghai University of Engineering Science

  • Shuichi Iwata

    • Graduate School of Frontier Sciences, The University of Tokyo

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• Electronic Structures of Zn(Te,O)

  ORAL

  March 18, 2009, 10:12 AM – March 18, 2009, 10:24 AM

  Authors

  • Byounghak Lee

    • Texas State University

  • L.-W. Wang

    • Lawrence Berkeley National Laboratory

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• Dielectric Function and Critical Point of GeSbTe Pseudo-binary Compound Thin Films

  ORAL

  March 18, 2009, 10:24 AM – March 18, 2009, 10:36 AM

  Authors

  • Hosun Lee

    • Dept. of Applied Physics, Kyung Hee University, Suwon 446-701, South Korea
    • Kyung Hee University
    • Department of Physics, Kyung Hee University, South Korea

  • Jun Woo Park

    • Kyung Hee University
    • Department of Physics, Kyung Hee University, South Korea

  • Youn-Seon Kang

    • Samsung Electronics

  • Tae-Yon Lee

    • Samsung Electronics

  • Dong-Seok Suh

    • Samsung Electronics

  • Ki-Joon Kim

    • Samsung Electronics

  • Cheol Kyu Kim

    • Samsung Electronics

  • Yoon Ho Kang

    • Samsung Electronics

  • Juarez L. F. Da Silva

    • NREL

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• Origin of the unusually large band gap bowing and the breakdown of the band-edge distribution rule in the SnxGe1-x alloys

  ORAL

  March 18, 2009, 10:36 AM – March 18, 2009, 10:48 AM

  Authors

  • Wan-Jian Yin

    • Fudan University, Shanghai, China

  • Xin-gao Gong

    • Surface Physics Laboratory and Department of Physics, Shanghai-200433
    • Fudan University, Shanghai, China
    • Physics Department, Fudan University, Shanghai, China
    • Surface Science Laboratory and Department of Physics, Fudan University, China
    • Fudan University, Shang Hai, PR China

  • Su-Huai Wei

    • National Renewable Energy Laboratory, Golden, Colorado, USA

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• Accurate electronic structure calculations of lead chalcogenides by QSGW method

  ORAL

  March 18, 2009, 10:48 AM – March 18, 2009, 11:00 AM

  Authors

  • Sergey Faleev

    • Seagate Technology

  • Oleg Mryasov

    • Seagate Technology

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