Effect of e-h Pairs on the Stability of Bond-Center Hydrogen in Silicon

ORAL

Abstract

Hydrogen injected into silicon at low temperature resides in the bond-centered site, H$^{+}$[BC]. This is the most fundamental hydrogen related defect in many covalent semiconductors. Thermal annealing shows H$^{+}$[BC] stability up to 150K, and correlates with Si vacancy migration. We report the first observation of the decay of H$^{+}$[BC] due to e-h pairs induced by energetic ions. Thin single crystal silicon films containing H$^{+}$[BC] ($\sim $35$\mu $m) were fabricated to permit subsequent transmission of energetic protons, creating high e-h pair concentrations and minimal displacement damage. In-situ infrared studies revealed a 90{\%} reduction of H$^{+}$[BC] sites after a 1.8 MeV proton dose of 50$\mu $C/cm$^{2}$ at 80K. Recombination of e-h pairs at defect sites is known to cause vacancy diffusion providing another mechanism for loss of H$^{+}$[BC]. Our results show the effect of e-h pairs on H$^{+}$[BC] stability. We interpret this in terms of the e-h pair/vacancy interaction.

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Authors

  • Nageswara Rao Sunkaranam

    • Department of Physics and Astronomy, Vanderbilt University

  • Sriram Dixit

    • Interdisciplinary Materials Science Program, Vanderbilt University

  • Gunter Luepke

    • Department of Applied Science, The College of William and Mary, Williamsburg, VA
    • Department of Applied Science, College of William and Mary
    • Department of Applied Science, the College of William and Mary
    • The College of William and Mary

  • Norman Tolk

    • Department of Physics and Astronomy, Vanderbilt University
    • Vanderbilt University

  • Leonard Feldman

    • Department of Physics and Astronomy \& Interdisciplinary Materials Science Program, Vanderbilt University
    • Vanderbilt University
    • Department of Physics and Astronomy, Vanderbilt University
    • Department of Physics and Astronomy \& Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235