Defects and Impurities in Si/Ge

Presentations

• Pathway connecting the four-interstitial ground state and chain in silicon

  ORAL

  March 16, 2006, 11:15 AM – March 16, 2006, 11:27 AM

  Authors

  • Yaojun Du

    • Wake Forest University

  • Thomas Lenosky

    • 879 Meadowview Dr, Columbus OH 43224

  • Stefan Goedecker

    • University of Basel

  • Richard Hennig

  • John W. Wilkins

    • The Ohio State University
    • the Ohio State University
    • Department of Physics, Ohio State University, Columbus, OH 43210

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• Recombination rate annealing following transient neutron irradiation

  ORAL

  March 16, 2006, 11:27 AM – March 16, 2006, 11:39 AM

  Authors

  • Harold Hjalmarson

    • Sandia National Labs

  • Peter Schultz

  • Normand Modine

    • Sandia National Laboratories

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• Theory of the Cyclotron Resonance in Si and Ge

  ORAL

  March 16, 2006, 11:39 AM – March 16, 2006, 11:51 AM

  Authors

  • Shigeji Fujita

  • Robert Simion

    • University of Buffalo

  • Rohit Singh

    • University at Buffalo, SUNY

  • Seiichi Watanabe

    • Hokkaido University
    • Hokkaido University, Japan

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• Stability of strained monohydride H:Si(105) and H:Ge(105) surfaces

  ORAL

  March 16, 2006, 11:51 AM – March 16, 2006, 12:03 PM

  Authors

  • Cristian V. Ciobanu

    • Colorado School of Mines
    • Division of Engineering, Colorado School of Mines

  • Ryan M. Briggs

    • Colorado School of Mines

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• Using Si(100) - 2 x 1:H as a Platform for Patterned Silicon Growth

  ORAL

  March 16, 2006, 12:03 PM – March 16, 2006, 12:15 PM

  Authors

  • Matthew M. Sztelle

    • Department of Electrical and Computer Engineering and Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana, Illinois

  • Scott W. Schmucker

    • Department of Electrical and Computer Engineering and Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana, Illinois

  • Joseph Lyding

    • Department of Electrical and Computer Engineering and Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana, Illinois
    • University of Illinois at Urbana-Champaign

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• Hole mobility in SiGe alloys from first principles.

  ORAL

  March 16, 2006, 12:15 PM – March 16, 2006, 12:27 PM

  Authors

  • Sian Joyce

  • Felipe Murphy-Armando

    • Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland

  • Stephen Fahy

    • Department of Physics, University College Cork, Ireland
    • Tyndall National Institute, University College Cork
    • Tyndall National Institute and Dept. of Physics University College Cork, Ireland
    • Department of Physics and Tyndall National Institute, University College, Cork, Ireland

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• First-principles calculation of phonon scattering of n-type carriers in SiGe alloys

  ORAL

  March 16, 2006, 12:27 PM – March 16, 2006, 12:39 PM

  Authors

  • Felipe Murphy Armando

  • Stephen Fahy

    • Department of Physics, University College Cork, Ireland
    • Tyndall National Institute, University College Cork
    • Tyndall National Institute and Dept. of Physics University College Cork, Ireland
    • Department of Physics and Tyndall National Institute, University College, Cork, Ireland

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• MEIS study of As and Sb implantation in Si(001) with excess vacancy concentration and SIMOX.

  ORAL

  March 16, 2006, 12:39 PM – March 16, 2006, 12:51 PM

  Authors

  • Mateus Dalponte

  • Henri Boudinov

    • UFRGS, Brazil

  • Lyudmila Goncharova

  • Eric Garfunkel

    • Rutgers
    • Rutgers University

  • Torgny Gustafsson

    • Rutgers University, USA
    • Rutgers University

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• DFT calculations of formation energy and properties of Frenkel pairs in Si

  ORAL

  March 16, 2006, 12:51 PM – March 16, 2006, 1:03 PM

  Authors

  • Matthew J. Beck

  • S. T. Pantelides

    • Department of Physics and Astronomy, Vanderbilt University, Nashville, TN

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• Effect of Hydrogen on the Migration Processes of Dislocations in Silicon

  ORAL

  March 16, 2006, 1:03 PM – March 16, 2006, 1:15 PM

  Authors

  • Norihisa Oyama

  • Takahisa Ohno

    • NIMS

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• Self-trapping-enhanced carrier recombination at light-induced boron-oxygen complexes in silicon

  ORAL

  March 16, 2006, 1:15 PM – March 16, 2006, 1:27 PM

  Authors

  • Mao-Hua Du

  • Mao-Hua Du

  • Howard Branz

  • Richard Crandall

    • National Renewable Energy Laboratory

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• Energy gain by defect formation: a new tight binding annealed model for a-Si

  ORAL

  March 16, 2006, 1:27 PM – March 16, 2006, 1:39 PM

  Authors

  • Joseph Feldman

    • Naval Research Laboratory and George Mason University
    • Center for Computational Materials Science, Naval Research Laboratory, and School of Computational Sciences, George Mason University

  • Noam Bernstein

    • Naval Research Laboratory

  • Marco Fornari

    • Central Michigan University
    • Dept. of Physics, Central Michigan University

  • Dimitris Papaconstantopoulos

    • Naval Research Laboratory and George Mason University

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• Effect of e-h Pairs on the Stability of Bond-Center Hydrogen in Silicon

  ORAL

  March 16, 2006, 1:39 PM – March 16, 2006, 1:51 PM

  Authors

  • Nageswara Rao Sunkaranam

    • Department of Physics and Astronomy, Vanderbilt University

  • Sriram Dixit

    • Interdisciplinary Materials Science Program, Vanderbilt University

  • Gunter Luepke

    • Department of Applied Science, The College of William and Mary, Williamsburg, VA
    • Department of Applied Science, College of William and Mary
    • Department of Applied Science, the College of William and Mary
    • The College of William and Mary

  • Norman Tolk

    • Department of Physics and Astronomy, Vanderbilt University
    • Vanderbilt University

  • Leonard Feldman

    • Department of Physics and Astronomy \& Interdisciplinary Materials Science Program, Vanderbilt University
    • Vanderbilt University
    • Department of Physics and Astronomy, Vanderbilt University
    • Department of Physics and Astronomy \& Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235

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