Thickness measurement of interfacial layer between HfO$_2$ film and Si substrate by Fourier analysis of x-ray reflectivity

ORAL

Abstract

Thickness of interfacial layers between Si-substrates and HfO$_2 $ films have been estimated by Fourier analysis of x-ray reflectivity. It is demonstrated that enhancement of the signals corresponding to the positions of low-density-contrast interfaces can be achieved through careful data processing in Fourier analysis. Details of the data processing procedures and comparison between results of the analysis and TEM measurements are presented.

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Authors

  • Y. J. Park

    • PAL and Dept. of Physics, POSTECH, KOREA

  • J.-S. Lee

  • B. H. Seung

  • S. Ji

  • K.-B. Lee

    • PAL, POSTECH, KOREA
    • Dept. of Physics, POSTECH, KOREA

  • H. S. Hwang

    • Dept. of MSE, GIST, KOREA