High-K Dielectrics

Presentations

• Theory of structural and dielectric properties of amorphous high-K dielectrics

  ORAL

  March 24, 2005, 5:00 AM – March 24, 2005, 5:12 AM

  Authors

  • David Vanderbilt

    • Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854-8019, USA
    • Department of Physics and Astronomy Rutgers, The State University of New Jersey, NJ 08854-8019, USA
    • Rutgers University
    • Rutgers University,NJ

  • Davide Ceresoli

    • Rutgers University

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• Dielectric properties of high-k oxides: Theory and experiment for Lu2O3

  ORAL

  March 24, 2005, 5:12 AM – March 24, 2005, 5:24 AM

  Authors

  • Emiliano Bonera

    • Laboratorio Nazionale MDM-INFM

  • Giovanna Scarel

    • Laboratorio Nazionale MDM-INFM

  • Marco Fanciulli

    • Laboratorio Nazionale MDM-INFM

  • Pietro Delugas

    • INFM-SLACS Università di Cagliari

  • Vincenzo Fiorentini

    • INFM-SLACS Università di Cagliari

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• Novel Chalcogenide Buffer Layer for Oxide Heteroepitaxy on Si(001)

  ORAL

  March 24, 2005, 5:24 AM – March 24, 2005, 5:36 AM

  Authors

  • D. S. Schmidt

  • T. Ohta

  • Q. Yu

  • F. S. Ohuchi

    • U. of Washington, Seattle

  • M. A. Olmstead

    • U. of Washington, Seattle

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• THz Optical Response from Coupled Ferroelectric/LO Phonon Mode in BaTiO3/Si(100)

  ORAL

  March 24, 2005, 5:36 AM – March 24, 2005, 5:48 AM

  Authors

  • Muneaki Hase

  • Masahiro Kitajima

    • Mat Engr Lab, Natl Inst for Mat Sci, Ibaraki 305-0047 Japan

  • Venu Vaithyanathan

  • Darrell G. Schlom

    • Dept of Mat Sci and Engr, Penn State Univ

  • Jeremy Levy

  • Hrvoje Petek

    • Dept of Physics, Univ of Pittsburgh

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• Valence band offsets and interface structure of HfxSi1-xO2 films on Si(111) from photoemission spectroscopy

  ORAL

  March 24, 2005, 5:48 AM – March 24, 2005, 6:00 AM

  Authors

  • John Rowe

    • University of North Carolina

  • Les Fleming

  • Gerry Lucovsky

    • North Carolina State University

  • Marc Ulrich

    • Army Research Office

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• Infrared absorption spectra at interfaces from first principles: Origin of LO and TO red shifts in ultrathin oxide films on silicon

  ORAL

  March 24, 2005, 6:00 AM – March 24, 2005, 6:12 AM

  Authors

  • Feliciano Giustino

    • EPFL Lausanne (Switzerland)

  • Alfredo Pasquarello

    • Ecole Polytechnique F\'ed\'erale de Lausanne (EPFL)

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• Thickness measurement of interfacial layer between HfO$_2$ film and Si substrate by Fourier analysis of x-ray reflectivity

  ORAL

  March 24, 2005, 6:12 AM – March 24, 2005, 6:24 AM

  Authors

  • Y. J. Park

    • PAL and Dept. of Physics, POSTECH, KOREA

  • J.-S. Lee

  • B. H. Seung

  • S. Ji

  • K.-B. Lee

    • PAL, POSTECH, KOREA
    • Dept. of Physics, POSTECH, KOREA

  • H. S. Hwang

    • Dept. of MSE, GIST, KOREA

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• Thin single crystal Sc2O3 Films on Si (111) with very sharp interface

  ORAL

  March 24, 2005, 6:24 AM – March 24, 2005, 6:36 AM

  Authors

  • M. Hong

    • Dept. Mat. Sci. \& Eng., National Tsing Hua Univ.

  • H. Y. Lee

    • National Synchrotron Radiation Res. Center

  • A. R. Kortan

    • Bell Laboratories, USA

  • J. Kwo

    • Dept. Phys, National Tsing Hua Univ.

  • P. Chang

  • Y. L. Huang

  • C. P. Chen

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• Electronic properties and band alignments of Hf-based gate dielectrics on silicon

  ORAL

  March 24, 2005, 6:36 AM – March 24, 2005, 6:48 AM

  Authors

  • R. Puthenkovilakam

  • J. Choi

  • J.P. Chang

    • Department of Chemical Engineering, University of California, Los Angeles

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• High-K MISFET channel mobility from magnetoresistance

  ORAL

  March 24, 2005, 6:48 AM – March 24, 2005, 7:00 AM

  Authors

  • R.T. Bate

  • W.W. Chance

  • P. Kumar

  • W.P. Kirk

    • NanoFAB Center, University of Texas at Arlington

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• First-principles investigation of oxygen diffusion in compressively strained high-density silicon oxide

  ORAL

  March 24, 2005, 7:00 AM – March 24, 2005, 7:12 AM

  Authors

  • T. Akiyama

    • Dept. of Physics Engineering, Mie Univ.

  • H. Kageshima

  • M. Uematsu

    • NTT Basic Research Labs., NTT Corp.

  • T. Ito

    • Dept. of Physics Engineering, Mie Univ

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• Size effect in self-trapped exciton photoluminescence from SiO2-based nanoscale materials

  ORAL

  Authors

  • Yuri Glinka

    • Vanderbilt University

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• Dielectric function of annealed sub-stoichiometric silicon oxide layers

  ORAL

  Authors

  • Emanuele Rimini

  • Corrado Spinella

  • Corrado Bongiorno

  • Giuseppe Nicotra

    • IMM-CNR UNIVERSITA' DI CATANIA

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