Isostructural phase transitions in GaN/ScN and InN/ScN superlattices

ORAL

Abstract

We predict the existence of pressure-induced isostructural phase transitions (IPTs) in GaN/ScN and InN/ScN superlattices from first principles. The IPTs in these superlattices are anomalous in the sense that they are associated with trivial order parameters and generate a dramatic change in many physical quantities. Furthermore, the {\it order} of the phase transition is found to be dependent on the superlattice period and on the non-transition-metal cation. We also reveal the reason behind, and consequences of, these unusual dependencies and IPTs.

*NSF grants DMR-0080054, DMR-9983678 and DMR-0102755, the ONR grants N00014-01-0365, N00014-01-1-0600 and N00014-04-1-0413, and the NATO grant PST.CLG.979025 and the Center for Piezoelectrics by Design.

Authors

  • V. Ranjan

  • S. Bin-Omran

  • Laurent Bellaiche

    • University of Arkansas
    • Physics Department, University of Arkansas, Fayetteville, AR - 72701.
    • Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • Ahmad Alsaad

    • Department of Physical Sciences, P.O. Box 3030, Irbid, Jordan