Focus Session: Wide Band Gap Semiconductors III

Presentations

• Semiconductor-Dielectric Interfaces: Structure, Defects and Mobility

  COFFEE_KLATCH · Invited

  March 23, 2005, 5:00 AM – March 23, 2005, 5:36 AM

  Authors

  • Leonard C. Feldman

    • Vanderbilt University

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• III-Nitrides on Ferroelectric Lithium Niobate: Impact of the Electrostatic Boundary Condition

  ORAL

  March 23, 2005, 5:36 AM – March 23, 2005, 5:48 AM

  Authors

  • Kyoung-Keun Lee

  • Gon Namkoong

  • Walter Henderson

  • W. Alan Doolittle

    • Georgia Institute of Technology

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• Integration of Functional Perovskites with (0001) GaN

  ORAL

  March 23, 2005, 5:48 AM – March 23, 2005, 6:00 AM

  Authors

  • Venu Vaithyanathan

  • Aaron Fisher

  • Darrell G. Schlom

    • Dept. of Materials Science and Engineering, Penn State Univ.

  • Paul J. Shlichta

    • Crystal Research, Olympia, WA

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• Polarization Effects on Heterojunction Band Offset Measurements of Oxide-GaN Interfaces

  ORAL

  March 23, 2005, 6:00 AM – March 23, 2005, 6:12 AM

  Authors

  • R.J. Nemanich

  • C.C. Fulton

  • B.R. Rodriguez

    • NC State

  • C. Liu

  • S. Cho

  • H. Morkoc

    • VCU

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• Effect of various surface treatments on optical and morphological characteristics of homoepitaxially overgrown GaN layers and device structures

  ORAL

  March 23, 2005, 6:12 AM – March 23, 2005, 6:24 AM

  Authors

  • Fatemeh Shahedipour-Sandvik

    • College of Nanoscale Science and Engineering, University at Albany-State University of New York

  • Vibhu Jindal

  • James Grandusky

  • Muhammad Jamil

    • College of NanoScale Science and Engineering, University at Albany-State University of New york
    • College of Nanoscale Science and Engineering, University at Albany-State University of New Yor

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• Reconstructions and adsorbates on polar and nonpolar GaN surfaces

  ORAL

  March 23, 2005, 6:24 AM – March 23, 2005, 6:36 AM

  Authors

  • David Segev

  • Chris Van de Walle

    • Materials Department, University of California, Santa Barbara CA 93106-5050
    • University of California, Santa Barbara
    • Materials Department, University of California, Santa Barbara

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• Self-heating study of an AlGaN/GaN-based high electron mobility transistor using visible and ultraviolet micro-Raman scattering

  ORAL

  March 23, 2005, 6:36 AM – March 23, 2005, 6:48 AM

  Authors

  • I. Ahmad

  • V. Kasisomayajula

  • J.M. Berg

  • M. Holtz

    • Texas Tech University, Lubbock, Texas 79409

  • S.R. Kurtz

  • C.P. Tigges

  • A.A. Allerman

  • A.G. Baca

    • Sandia National Laboratory, Albuquerque, New Mexico 87185

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• Air-Stable Field-Enhanced III-Nitride Photocathodes

  ORAL

  March 23, 2005, 6:48 AM – March 23, 2005, 7:00 AM

  Authors

  • Robert Strittmatter

    • Jet Propulsion Labs

  • Jordana Blacksberg

    • Jet Propulsion Labs

  • Shouleh Nikzad

    • Jet Propulsion Labs

  • Amir Dabiran

    • SVT Associates

  • Andrew Wowchak

    • SVT Associates

  • Peter Chow

    • SVT Associates

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• Isostructural phase transitions in GaN/ScN and InN/ScN superlattices

  ORAL

  March 23, 2005, 7:00 AM – March 23, 2005, 7:12 AM

  Authors

  • V. Ranjan

  • S. Bin-Omran

  • Laurent Bellaiche

    • University of Arkansas
    • Physics Department, University of Arkansas, Fayetteville, AR - 72701.
    • Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA

  • Ahmad Alsaad

    • Department of Physical Sciences, P.O. Box 3030, Irbid, Jordan

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• Atomic and Electronic Structure of Polar Nitride/Oxide Interfaces: h-GaN(0001) and c-GaN(111) on MgO(111)

  ORAL

  March 23, 2005, 7:12 AM – March 23, 2005, 7:24 AM

  Authors

  • Marija Gajdardziska-Josifovska

  • Vlado Lazarov

  • Justin Zimmerman

  • Yi Rong

  • Sau Ha Cheung

  • M. Weinert

    • University of Wisconsin, Milwaukee, WI 53211

  • Lian Li

    • Department of Physics and Lab for Surface Studies, University of Wisconsin-Milwaukee

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• Defect engineering in Si substrate for strain reduction at GaN/Si interface

  ORAL

  March 23, 2005, 7:24 AM – March 23, 2005, 7:36 AM

  Authors

  • Muhammad Jamil

    • College of NanoScale Science and Engineering, University at Albany-State University of New york
    • College of Nanoscale Science and Engineering, University at Albany-State University of New Yor

  • James Grandusky

  • Fatemeh Shahedipour-Sandvik

    • College of Nanoscale Science and Engineering, University at Albany-State University of New York

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