Ion Beam Synthesis of InAsN Nanostructures

We recently demonstrated the utility of ion-beam-synthesis for producing light-emitting GaAsN nanostructures [1]. Here, we report the ion-beam-synthesis of InAsN nanostructures, using low temperature N implantation into epitaxial InAs. 100keV N ion implantation, with a dose of 5x10$^{17}$cm$^{-2}$, leads to complete amorphization of a $\sim $300nm thick surface layer. Following annealing, this layer transformed into three layers: a nanostructure layer containing $\sim $5nm zincblende InN-rich InAsN crystallites within an amorphous matrix, a polycrystalline layer consisting of $\sim $100nm InAs-rich InAs:N crystals and amorphous domains, and layer of solid-phase epitaxially grown InAs. These results suggest that ion-beam synthesis is promising for producing InN-rich nanostructures or/and InAs-rich alloys. We will also discuss the effects of implantation and annealing conditions on the structure and properties of ion beam synthesized InAsN nanostructures. [1] X. Weng. R.S. Goldman, et al, J. Appl. Phys. 92, 4012 (2002); Appl. Phys. Lett. 85, 2774 (2004).