Focus Session: Dilute Nitride Semiconductors: From Atoms to Devices II

Presentations

• Band Anticrossing Effects in Dilute Nitrides

  COFFEE_KLATCH · Invited

  March 22, 2005, 11:30 AM – March 22, 2005, 12:06 PM

  Authors

  • Wladek Walukiewicz

    • Lawrence Berkeley National Laboratory

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• Penetration of dilute nitrogen states deep into the GaPN conduction band$^{\ast}$

  COFFEE_KLATCH · Invited

  March 22, 2005, 12:06 PM – March 22, 2005, 12:42 PM

  Authors

  • Sergey Dudiy

    • National Renewable Energy Laboratory, Golden CO 80401

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• Effects of N incorporation on the electronic structure of GaNP: Origin of the 2.87 eV optical transition

  ORAL

  March 22, 2005, 12:42 PM – March 22, 2005, 12:54 PM

  Authors

  • Irina Buyanova

  • M. Izadifard

  • Weimin M. Chen

    • Department of Physics and Measurement Technology, Linkoping University, Sweden

  • H.P. Xin

  • C.W. Tu

    • Department of Electrical and Computer Engineering, University of California, San Diego, USA

  • S.J. Pearton

    • Department of Materials Science and Engineering, University of Florida, Gainesville, USA

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• Vibrational spectroscopy of N-H2 complexes in GaPN

  ORAL

  March 22, 2005, 12:54 PM – March 22, 2005, 1:06 PM

  Authors

  • S. Kleekajai

  • M. Stavola

  • W.B. Fowler

  • M. Capizzi

  • A. Polimeni

  • C.W. Tu

  • K. Martin

    • Lehigh University

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• Effects of heavy nitrogen doping on the host band structure of GaP

  ORAL

  March 22, 2005, 1:06 PM – March 22, 2005, 1:18 PM

  Authors

  • B. Fluegel

  • Yong Zhang

  • J.F. Geisz

  • A. Mascarenhas

    • National Renewable Energy Laboratory

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• Investigations of the energy-fine structure related to different nitrogen nearest-neighbor environments in GaInNAs layers and GaInNAs/GaAs quantum wells

  ORAL

  March 22, 2005, 1:18 PM – March 22, 2005, 1:30 PM

  Authors

  • Robert Kudrawiec

  • Jan Misiewicz

    • Institute of Physics, Wroclaw University of Technology, Poland

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• Structure and local vibrational frequencies of the 2H complex in H-irradiated GaAs:N

  ORAL

  March 22, 2005, 1:30 PM – March 22, 2005, 1:42 PM

  Authors

  • Mao-Hua Du

  • Sukit Limpijumnong

  • Shengbai Zhang

    • National Renewable Energy Laboratory

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• Ion Beam Synthesis of InAsN Nanostructures

  ORAL

  March 22, 2005, 1:42 PM – March 22, 2005, 1:54 PM

  Authors

  • X. Weng

  • P.T. Wang

  • R.S. Goldman

    • The University of Michigan
    • University of Michigan
    • Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109-2136
    • Program in Applied Physics, Department of Material Science and Engineering

  • Y.Q. Wang

    • Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, NM 87545

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• The influence of growth temperature on the nitrogen incorporation into MBE-grown GaInNAs-on-GaAs epilayers

  ORAL

  March 22, 2005, 1:54 PM – March 22, 2005, 2:06 PM

  Authors

  • E.-M. Pavelescu

  • M. Pessa

  • J. Konttinen

  • M. Dumitrescu

    • Optoelectronics Research Centre, P.O. Box 692, Tampere University of Technology, 33100, Tampere

  • J. Wagner

    • Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany

  • R. Kudrawiec

  • J. Misiewicz

    • Institute of Physics, Wroclaw University of Technology Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

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• GaAs-based InGaAsN Lasers

  ORAL

  March 22, 2005, 2:06 PM – March 22, 2005, 2:18 PM

  Authors

  • Changsi Peng

  • Tomi Jouhti

  • Janne Konttinen

  • Markus Pessa

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