Computational investigation on the effects of ion transport in HAR pattern MASK etching with Ar plasma

In previous plasma etching studies, comparative studies have been conducted on different mask pattern shapes such as hole or trench, but there has not been a rigorous study on the effect of ion transport in simulations considering actual etching results. A simulation model of trench etching profile was constructed with plasma parameters and etching profiles obtained by Ar plasma etching experiments. Calculations were also performed in the hole to calculate ion flux values that are difficult to determine in experiments, to explain the etch profile formation, and to compare the calculation results of the two models. This presentation reports on simulations based on plasma process conditions, which show that the ion flux incident on the etch front varies depending on the shape of the ACL mask pattern, and that this affects the etch profile.