Electron power absorption dynamics in capacitive RF plasmas: from fundamental understanding to process-relevant parameter control

ORAL  · Invited

Abstract

Capacitively Coupled Radio-Frequency Plasmas (CCP) are one of the most frequently used plasma sources in semiconductor manufacturing, particularly in etching and deposition. The fabrication of next-generation semiconductor devices requires precise control over plasma characteristics, including the generation of active species (e.g., electrons, ions, and reactive neutrals) via electron-impact dissociation and ionization of the background gas, as well as their uniformity and flux–energy distribution functions at boundary surfaces, particularly at the wafer. Comprehensive insight into electron power absorption mechanisms is fundamental to enabling such advanced plasma control. In this presentation, the distinct electron power absorption dynamics in electropositive argon plasmas across different reactor geometries and surface materials, as well as in magnetized and unmagnetized electronegative CF₄ plasmas, will be discussed based on Particle-in-Cell/Monte Carlo Collision simulations. Based on this fundamental understanding, control concepts through customizing the reactor geometry, applying tailored driving voltage waveforms, and introducing an external magnetic field for improving the plasma uniformity, charged particle distribution functions, as well as generation rates of radicals are developed and will be introduced.

*This work was supported by German Research Foundation (No. 428942393) and National Natural Science Foundation of China (No. 12020101005, 12475202).

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Presenters

  • Li Wang

    • Ruhr University Bochum
    • Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany

Authors

  • Li Wang

    • Ruhr University Bochum
    • Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany

  • Aranka Derzsi

    • Wigner Research Center for Physics
    • HUN-REN Wigner Research Centre for Physics, Budapest, Hungary

  • Peter Hartmann

    • Wigner Research Centre for Physics, Hungary
    • HUN-REN Wigner Research Centre for Physics, Budapest, Hungary

  • Zoltan Donko

    • Wigner Research Center for Physics
    • HUN-REN Wigner Research Centre for Physics, Budapest, Hungary
    • Institute for Solid State Physics and Optics, HUN-REN Wigner Research Centre for Physics

  • Maximilian Ryppa

    • Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany

  • Constantin Neuroth

    • Ruhr-University Bochum
    • Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany

  • Florian Beckfeld

    • Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany

  • Yuanhong Song

    • Dalian University of Technology
    • School of Physics, Dalian University of Technology, Dalian, China
    • Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, Dalian

  • Julian Schulze

    • Chair of Applied Electrodynamics and Plasma Technology, Ruhr University Bochum, Bochum, Germany