Semi-analytical sheath model for electronegative radio frequency plasmas

In plasma etching processes, the ion energy distributions (IEDs) arriving at substrates strongly affect the etching rates. In order to accurately determine the IEDs, various analytic and numerical models have been developed. However, over the past few decades, very few studies have been conducted on sheath model for electronegative radio frequency plasmas. Therefore, in this work, an equivalent circuit model is presented for electronegative radio frequency plasmas.