Silicon carbon nitrid thin films prepared by PECVD technology

The deposition of silicon carbon nitride has been widely studied due to their attractive properties, such as wear resistance, chemically inertness and wide band gap, which provide optical, electronic and other applications. Silicon carbon nitride films were grown by the plasma enhanced chemical vapour deposition (PE CVD) technique. The flow rates of SiH$_{4}$, CH$_{4}$ and NH$_{3}$ gases were 10 sccm, 30 sccm and 15 sccm, respectively. The deposition temperatures were 350, 400 and 450\r{ }C respectively. The concentration of species in the SiCN films was determined by Rutherford backscattering spectrometry (RBS). Chemical compositions were analyzed by infrared spectroscopy. The hydrogen concentration was determined by the elastic recoil detection (ERD) method. Irradiation of samples by fast neutrons in IREN accelerator at JINR Dubna was used for radiation hardness investigation. Photoluminescence spectra were measured at 6 K and 300 K. The electrical properties of SiCN films were determined by I-V and C-V measurement. The properties of SiCN films are discussed on the base of the obtained results.