Porous Low-k Material Etch For 32 nm and Beyond

ORAL

Abstract

Porous low-k materials with k $\sim $2.2 pose new challenges for plasma etch/strip damage, rough etch front/micro-trenching and via faceting are the top issues in ULK all-in-one etch. In this paper, low-k damage has been characterized for both etch and strip. The impacts of etch and strip on ULK etch and dependence of via faceting on plasma conditions and plug height have been studied. Process window of faceting control has also been discussed. It has been demonstrated that all-in-one etch and strip for via first approach can be extended to ULK (2.2) integration.

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Authors

  • Yifeng Zhou

    • Applied Materials, Inc.

  • Qingjun Zhou

    • Applied Materials, Inc.

  • Ryan Patz

    • Applied Materials, Inc.

  • Hairong Tang

    • Applied Materials, Inc.

  • Jeremiah Pender

    • Applied Materials, Inc.

  • Michael Armacost

    • Applied Materials, Inc.

  • Catherine Labelle

    • Advanced Micro Devices

  • David Horak

    • IBM Research