UV-Ozone Oxidation of ultra thin Ru layers
ORAL
Abstract
Ruthenium and its oxides and nitrides are potential candidates for number of advanced applications in Silicon based semiconductor technology such as metal-based gate electrodes and diffusion barriers for copper interconnects. This is due to their good thermal stability, low resistivity, suitable work function and diffusion barrier properties. Physico-chemical and electrical properties of Ru oxides are intimately dependent on the oxide preparation method mainly due to the resulting microstructure, oxidation state and impurities/contaminants. 5 to 7 nm Ru films were deposited on Si and SiO2 substrates by DC magnetron sputtering in Ar atmosphere. The films were then exposed to UV/Ozone radiation and oxygen at room temperature for a duration ranging from 15 min to 60 min. In-situ X-ray photoelectron spectroscopy (XPS) is used to investigate Ru oxidation rate and the bonding environment. A comparison with Ru oxide prepared via reactive DC sputtering in an Ar/O2 mixture will be presented.
*This work was supported by the Texas Advanced Technology Program.
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