Interfacial stability of RuO2 on HfxSi1-xO2/Si

ORAL

Abstract

Alternative metal-based gate electrodes are currently under consideration as a replacement of Poly-Si gates. Metal gates are required to maintain scaling and performance of future CMOS devices. Ru based compounds are potential gate electrode candidates for future metal-oxide-semiconductor (MOS) devices. RuO2, with thickness of 500A were deposited on HfxSi1-xO2/Si structures by DC sputtering. These structures were annealed in flowing N2 atmosphere at temperatures ranging from 800C to 1000C. The thermal stability and interfacial diffusion and reaction of RuO2 on HfxSi1-xO2/Si gate dielectric were investigated using Rutherford Backscattering Spectrometry (RBS) and SEM. An overview of RuO2/ HfxSi1-xO2/Si interface integrity and pinhole formation issues will be presented.

*This work was supported by the Texas Advanced Technology Program

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Authors

  • Changduk Lim

  • Vaishali Ukirde

    • Dept. of Materials Science, University of North Texas

  • Manuel Quevedo-Lopez

  • Mohamed El Bouanani

    • Dept. of Materials Science, University of North Texas