Precise 2D electric field density simulations for superconducting quantum devices

Dielectric loss due to two-level systems is a limiting factor for superconducting qubit relaxation times. These losses arise mostly from very thin interfacial defect regions in superconducting devices, making it difficult to accurately simulate the electric field density in these regions with traditional electromagnetic solvers. In this work, we demonstrate a fast boundary integral equation formulation solver that allows the precise simulation of electric field density in these thin regions, showing a significant time improvement over currently available commercial solvers. We compare results to traditional methods and literature, showing good agreement.