Controlled Topological Transitions by Manipulating Monopole Injection in Fe/Gd Multilayers
POSTER
Abstract
Topological spin textures in magnetic materials have garnered significant interest due to their unique physical behaviors associated with the skyrmion number (Q). A non-zero skyrmion number provides enhanced stability compared to topologically trivial spin textures with Q=0 [1, 2]. Owing to their high stability, the topological spin textures are promising candidates for next-generation spin-based electronic devices. To stably form such topological spin textures, it is essential to induce transitions that change the skyrmion number (ΔQ≠0) called topological transition. Achieving these topological transitions requires the controlled injection of magnetic singularities, particularly magnetic monopoles or Bloch points [3, 4].
Here, we show controlled topological transitions between stripe domains, topologically trivial bubbles, and magnetic skyrmions in Fe/Gd multilayers by manipulating monopole injection by tuning in-plane magnetic fields using magnetic transmission x-ray microscopy combined with micromagnetic simulations. Additionally, we show that in-plane magnetic fields increase the local exchange energy density at the top and bottom surfaces, thereby triggering monopole injection. Our work offers a promising pathway for developing spin-based memory and logic devices, with the controlled injection of magnetic monopoles serving as a key mechanism for topological transitions.
Here, we show controlled topological transitions between stripe domains, topologically trivial bubbles, and magnetic skyrmions in Fe/Gd multilayers by manipulating monopole injection by tuning in-plane magnetic fields using magnetic transmission x-ray microscopy combined with micromagnetic simulations. Additionally, we show that in-plane magnetic fields increase the local exchange energy density at the top and bottom surfaces, thereby triggering monopole injection. Our work offers a promising pathway for developing spin-based memory and logic devices, with the controlled injection of magnetic monopoles serving as a key mechanism for topological transitions.
*Research at the ALS was supported by the U.S. Department of Energy (DE-AC02-05CH11231). M.-Y.I. acknowledges support from Lawrence Berkeley National Laboratory through the Laboratory Directed Research and Development (LDRD) Program. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (NRF-2020R1C1C1006194, RS-2023-00217968, 2020M3F3A2A03082987, RS-2024-00333221, and RS-2024-00405290). Research at UC San Diego was supported by the U.S. National Science Foundation (NSF) under the award from the National Science Foundation, Division of Materials Research Award 2105401. S.A.M. acknowledges support from the U.S. Department of Defense.
Presenters
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Hee-Sung Han
- Korea National University of Transportation