Nanofabrication and transport studies of Quasi-one-dimensional Topological Insulators Bismuth halides

POSTER

Abstract

Bismuth halides Bi4X4 (X = Br, I) constitute a family of quasi-one-dimensional (1D) topological insulators (TIs) that promise advantages such as multiple cleavage planes, strain-induced phase transitions and hosting of helical hinge modes. Depending on different combinations of halogen atoms, members of the bismuth halides family can exhibit distinct topological properties, ranging from a weak topological insulator to a higher order topological insulator. To-date, studies of the transport properties of Bi4X4 materials are still scarce. Here, using Bi4X4 single crystals, we are able to exfoliate and fabricate hexagonal boron nitride encapsulated thin layer Bi4X4 field effect transistors, and investigate their transport behavior as a function of temperature and charge density. We find evidence of gate tunable surface states in Bi4I4 and one-dimensional transport channels in Bi4Br4.

*This work is mainly supported by the National Science Foundation (NSF) through the DMREF program.

Publication: Gate-Tunable Transport in Quasi-One-Dimensional α-Bi4I4 Field Effect Transistors
Yulu Liu, Ruoyu Chen, Zheneng Zhang, Marc Bockrath, Chun Ning Lau, Yan-Feng Zhou, Chiho Yoon, Sheng Li, Xiaoyuan Liu, Nikhil Dhale, Bing Lv, Fan Zhang, Kenji Watanabe, Takashi Taniguchi, Jianwei Huang, Ming Yi, Ji Seop Oh, and Robert J. Birgeneau
Nano Letters 2022 22 (3), 1151-1158
DOI: 10.1021/acs.nanolett.1c04264

Evidence of One-dimensional Edge States in Quasi-one-dimensional Topological Insulators Bi4Br4 (in preparation) 2024
Zheneng Zhang, Jiayin Wang, Chun Ning Lau.

Presenters

  • Zheneng Zhang

    • Ohio State University

Authors

  • Zheneng Zhang

    • Ohio State University

  • Jiayin Wang

    • Ohio State University

  • Yulu Liu

    • Ohio State Univ - Columbus

  • ChunNing Lau

    • Ohio State University
    • Department of Physics, The Ohio State University

  • Marc Bockrath

    • Ohio State University

  • Wenhao Liu

    • University of Texas at Dallas

  • Nikhil U Dhale

    • University of Texas at Dallas

  • Bing Lv

    • University of Texas at Dallas

  • Fan Zhang

    • University of Texas at Dallas

  • Chiho Yoon

    • University of Texas at Dallas

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science

  • Jianwei Huang

    • Rice University

  • Ming Yi

    • Rice University

  • Ji Seop Oh

    • University of California, Berkeley

  • Robert J Birgeneau

    • University of California, Berkeley

  • Ruoyu Chen

    • the Ohio State University