Fabrication of ultra-clean gate-tunable rhombohedral multilayer graphene devices for STM study (Part 1)

POSTER

Abstract

Rhombohedral multilayer graphene exhibits exotic correlated electronic states and topological phases, such as the integer and fractional Chern insulating states. While prior studies have used transport methods to probe these properties, direct STM studies remain limited, particularly for higher-layer structures. Here, we present the fabrication of gate-tunable rhombohedral multilayer graphene devices. Our poster details the device fabrication process of using a novel PVC dry transfer technique to prevent the rhombohedral domain from relaxing while ensuring a clean surface for STM studies.

Presenters

  • Bowei Yang

    • University of California, Berkeley

Authors

  • Bowei Yang

    • University of California, Berkeley

  • Aining Hu

    • University of California, Berkeley

  • Boxi Li

    • University of California, Berkeley
    • Peking Univ

  • Xu Wei

    • Massachusetts Institute of Technology

  • Dhanvanth Balakrishnan

    • University of California, Berkeley

  • Yi-Fan Zhao

    • University of California, Berkeley

  • Tonghang Han

    • Massachusetts Institute of Technology

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Functional Materials, National Institute for Materials Science
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
    • National Institute of Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science

  • Takashi Taniguchi

    • National Institute for Materials Science
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science

  • Alex K Zettl

    • University of California, Berkeley

  • feng wang

    • University of California, Berkeley

  • Long Ju

    • MIT

  • Alexander Weber-Bargioni

    • Lawrence Berkeley National Laboratory

  • Michael F Crommie

    • University of California, Berkeley