Hybrid metal-semiconductor quantum dots for analog quantum simulation of Kondo lattice models : quantum point contacts in the integer quantum Hall regime

InAs quantum wells have recently offered the possibility of designing hybrid metal-semiconductor quantum dots with higher charging energies, for probing quantum criticality over a larger energy range. We demonstrate a key building block for hybrid metal-semiconductor dots in InAs, quantum point contacts at high field in the integer quantum hall regime, building on the demonstration of such point contacts at low field in [1]. Quantum point contacts allow for tunable transmission of quantum Hall edge modes within mesoscopic devices, a key requirement for analog quantum simulation of quantum critical points [2]. We present transport data showing quantized QPC plateaus at high fields for such quantum point contacts. Additionally, we characterize the formation of potential disorder-induced quantum dots within the point contact constriction and the ability to screen such dots using an additional gate.

1. Hsueh, C.L., Sriram, P. et al. Phys. Rev. B 105, 195303 (2022).
   
   Pouse, W., Peeters, L., et al. Nat. Phys. 19, 492–499 (2023).