Shocking a transparent semiconducting oxide to 15 Mbar: Z machine experiments and EOS modeling.

ORAL

Abstract

Ga2O3 is a transparent semiconducting oxide with an ultra-large band gap. Its multiple low-symmetry crystal structures and thermal anisotropy make experiments, density functional theory (DFT) simulations, and equation of state (EOS) design much more challenging, which motivates us to push boundaries of both experimental and modelling methods. We present recent SNL Z machine Hugoniot data up to 15 Mbar with corresponding shock temperatures, new DFT calculations, a multiphase, broad range EOS and the first phase diagram for Ga2O3, covering four solid phases and the liquid.

*SAND2023-12297A. SNL is managed by NTESS, LLC under contract DE-NA0003525.Work at Los Alamos National Laboratory is supported by the US DOE through contract number 89233218NCA000001.This work describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the work do not necessarily represent the views of the U.S. Department of Energy or the United States Government.

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Presenters

  • Pat Kalita

    • Sandia National Laboratories

Authors

  • Pat Kalita

    • Sandia National Laboratories

  • Scott D Crockett

    • Los Alamos Natl Lab

  • Travis Sjostrom

    • Los Alamos National Laboratory

  • Joshua P Townsend

    • Sandia National Laboratories

  • Philippe F Weck

    • Sandia National Laboratories

  • Jacob Banasek

    • Sandia National Laboratories

  • David E Bliss

    • Sandia National Laboratories

  • Heath Hanshaw

    • Sandia National Laboratories

  • Kyle R Cochrane

    • Sandia National Laboratories

  • Christopher T Seagle

    • Sandia National Laboratories