Electrical properties of Mo/SiC Schottky barrier diodes

Molybdenum has been recognized as a refractory metal suitable for high temperature applications. It has been used as a barrier material in processing silicon carbide devices. In this investigation, molybdenum Schottky contacts were deposited on SiC at different temperatures ranging from 26 $^{\mathrm{o}}$C to 900 $^{\mathrm{o}}$C using dc magnetron sputtering. The electrical properties of the Schottky barrier diodes were characterized using current-voltage, capacitance-voltage and current-voltage-temperature measurements. The as-deposited diodes exhibited ideality factor varying from 1.03 to 1.71 and barrier height ranging from 1.04 to 1.58 eV. Additional results from the characterization will be provided in this presentation.