planarization techniques for integrated waveguide detectors

ORAL

Abstract

Wafer curvature is a common complication during device processing. A minimal wafer curvature is critical when fabricating 3-dimensional integrated circuits. Chemical mechanical planarization (CMP) is a relatively new process used to planarize topographical surfaces. However, when removing small-scale topographical features CMP is limited by the amount of material to be removed and wafer curvature. We have developed a wet thermal oxidation planarization process to bypass the need for the CMP process. This oxidation process has been implemented in the development of a Si$_{3}$N$_{4}$ on Si, waveguide on photodetector device.

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Authors

  • Michael Buzbee

    • Electro-Optics Graduate Program, University of Dayton, Dayton, Ohio 45469

  • David Lombardo

    • Electro-Optics Graduate Program, University of Dayton, Dayton, Ohio 45469

  • Andrew Sarangan

    • Electro-Optics Graduate Program, University of Dayton, Dayton, Ohio 45469

  • Qiwen Zhan

    • Electro-Optics Graduate Program, University of Dayton, Dayton, Ohio 45469

  • Imad Agha

    • Department of Physics and Electro-Optics Graduate Program, University of Dayton, Dayton, Ohio 45469
    • University of Dayton, OH
    • Department of Physics and Electro-Optics Graduate Program University of Dayton, Dayton, Ohio 45469
    • University of Dayton