Application of Optical Hall Effect to PV Relevant Materials
ORAL
Abstract
Transport properties [carrier concentration (N), mobility (μ), effective mass (m*)] of PV device materials are deduced from free carrier optical absorption using non-contacting optical Hall effect measurements. This technique has the capability to determine the transport properties of each component layer in complex multilayer PV device structures, which may be inaccessible by direct electrical measurements like electrical Hall effect and 4-point probe as those technique require direct physical contact. Case studies include CH3NH3PbI3, CdTe, and CuInSe2 thin films as well as commercial Si wafers. This technique shows the sensitivity to three parameters N, μ and m* for Si wafers; and two N and μ for CH3NH3PbI3, CdTe, and CuInSe2 thin films while THz ellipsometry alone shows the sensitivity to N and μ for the wafers; and either N or μ for the thin films when other value is fixed from literature. Here in each case, an additional transport parameter measurement is gained from the magnetic field dependent THz ellipsometry measurements.
*This work was supported by University of Toledo start-up funds, ODOD Ohio Research Scholar Program (Grant# TECH 09-025), ONR (Contract# N00014-17-2223), AFL Space Vehicles Directorate (Contract# FA9453-11-C-0253), and NSF-MRI (Grant# 1228917).
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Presenters
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Prakash Uprety
- Wright Center for Photovoltaics Innovation and Commercialization & Department of Physics and Astronomy, University of Toledo, Toledo, OH, 43606, USA