Impact of Selenium on Surface Morphology & Charge Carrier Dynamics of co-Sputtered CdSe<sub>x</sub>Te<sub>1-x</sub> Alloys
ORAL
Abstract
Band gap of the co-sputtered CdSexTe1-x ternary alloys for various concentration of Se has been calculated using absorbance and photoluminescence (PL) spectra. A clear evidence of band gap bowing with bowing parameter b = (0.81 ± 0.03) was observed consistent with the values reported by the previous researchers. Enhanced grain size and monotonic increase in photogenerated charge carrier lifetime with Se content has also been observed in CdSexTe1-x alloy. We attributed such a prolonged carrier lifetime to the shallowing of sub-gap defect states because of band gap narrowing, and the enlarged grain.
*The authors gratefully acknowledge funding support from the U.S. Air Force Research Laboratory, Space Vehicles Directorate, under Contract # FA9453-11-C-0253.
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Presenters
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Niraj Shrestha
- University of Toledo