Hall Effect Studies of LPCVD grown $\beta $-Ga$_{\mathrm{2}}$O$_{\mathrm{3}}$ on Sapphire

With its ultra-wide bandgap of 4.5-4.9 eV and large breakdown electronic field, $\beta $ - Ga$_{\mathrm{2}}$O$_{\mathrm{3}}$ has recently attracted attention because of its potential for next generation power electronics applications. The estimated breakdown field for $\beta $ -Ga$_{\mathrm{2}}$O$_{\mathrm{3}}$ is 8 MV/cm, much larger than 2.5 MV/cm for 4H-SiC and 3.3 MV/cm for GaN, which could enable power electronics with larger power density and greater efficiency [1]. Also, Ga$_{\mathrm{2}}$O$_{\mathrm{3}}$ has the potential to be more cost-efficient in mass production than other wide bandgap materials due to its ability to be synthesized through standard melt growth methods [2]. With this motivation, this study examines the electronic properties of $\beta $ - Ga$_{\mathrm{2}}$O$_{\mathrm{3}}$ via temperature dependent Hall effect measurements. Among several samples, the highest measured mobility was 34 cm2/Vs at room temperature and 40 cm2/Vs at 150K. These results indicate the potential of LPCVD grown Si-doped Ga$_{\mathrm{2}}$O$_{\mathrm{3}}$ for next generation semiconductor power electronics applications. [1] Applied Physics Letters 100, 013504 (2012) [2] Applied Physics Letters 103, 123511 (2013).