Approaching the Intrinsic Bandgap in Suspended High-Mobility Graphene Nanoribbons

POSTER

Abstract

We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon (GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm$^{2}$ V$^{-1}$ s$^{-1}$ and an intrinsic bandgap. The experimentally derived bandgap is in \textit{quantitative} agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the bandgap in non-armchair GNRs is partially due to the magnetic zigzag edges.

Authors

  • Ming-Wei Lin

    • Wayne State University

  • Cheng Ling

    • Wayne State University

  • Luis Agapito

    • California State University

  • Nicholas Kioussis

    • California State University

  • Yiyang Zhang

    • Wayne State University

  • Mark Ming-Cheng Cheng

    • Wayne State University

  • Weili Wang

    • Harvard University

  • Efthimios Kaxiras

    • Harvard University

  • Zhixian Zhou

    • Wayne State University