Capacitance-Voltage Properties of AlGaN Schottky Devices

POSTER

Abstract

Electrical properties of Si doped AlGaN films, grown by radio-frequency plasma assisted molecular beam epitaxy, are investigated using variable frequency capacitance-voltage as a function of temperature. In particular, a comprehensive investigation of the properties of Ni/Au Schottky contacts as a function of temperature and frequency will be reported.

Authors

  • A. Di Mascio

    • Department of Physics, University of Dayton, OH

  • M. Ahoujja

    • Department of Physics, University of Dayton, OH

  • S. Elhamri

    • Department of Physics, University of Dayton, OH

  • R. Berney

    • Department of Physics, University of Dayton, OH