Spin flip times of donor bound electrons in GaAs and InP as a function of magnetic field

Donor bound electrons in III-V semiconductors could provide a qubit with high optical homogeneity and strong optical transitions. The fundamental limit to their performance in quantum information devices is the electron spin flip time \(T_1\). However, the specific mechanisms responsible for spin flips of donor bound electrons are not well understood. We have measured the spin flip time \(T_1\) for electron spins bound to donors in GaAs and InP as a function of magnetic field and donor density in order to help elucidate the mechanisms responsible for spin flips. Measuring \(T_1\) in this way probes the fundamental limits for using bound electrons in semiconductors for quantum information applications.