Optical Absorption and Carrier Dynamics of Semiconductor Delafossites.

POSTER

Abstract

Delafossites semiconductor oxides (ABO$_{\mathrm{2}})$ are being considered for wide range of photovoltaic and photocatalytic applications. In ternary crystals the fundamental band gap is forbidden, whereas addition of second B site ion breaks inversion symmetry and allows the transition to occur. In this study, optical absorption, photoconductivity and transient absorption are used to investigate the carrier dynamics of delafossites CuGaO$_{\mathrm{2\thinspace }}$and related CuGa$_{\mathrm{1-x}}$Fe$_{\mathrm{x}}$O$_{\mathrm{2\thinspace }}$(with 0.00 $\le $ x $\le $ 0.05) alloys for potential applications.

Authors

  • Rishmali Sooriyagoda

    • Department of Physics and Astronomy,West Virginia University
  • Tess R. Senty

    • Department of Physics and Astronomy,West Virginia University
  • Barry Haycock

    • Department of Physics and Astronomy,West Virginia University
  • Jonathan Lekse

    • The National Energy Technology Laboratory
  • Christopher Matranga

    • The National Energy Technology Laboratory
  • Hong Wang

    • Department of Physics and Astronomy,West Virginia University
  • Gihan Panapitiya

    • Department of Physics and Astronomy,West Virginia University
  • Alan D. Bristow

    • Department of Physics and Astronomy,West Virginia University
  • James P. Lewis

    • Department of Physics and Astronomy,West Virginia University