Exploring Mobility in ZnTe-Coated InAs Nanowires
ORAL
Abstract
Nanowire-based devices have rapidly emerged as key elements in the realm of
nanoelectronics and quantum computing. ZnTe is a wide bandgap semiconductor
material that can be used to create heterostructures when combined with other
semiconductor materials, such as InAs. These heterostructures can be host to
quantum wells and quantum dots, which makes them valuable for quantum
computing and photonics technology. Due to the heterovalent nature of the
interface, a better understanding of the electronic properties is necessary. Our
research explores how ZnTe shell coatings influence the mobility of InAs nanowires.
Our analysis will include TEM results showing lattice structure and thickness of ZnTe
shells.
nanoelectronics and quantum computing. ZnTe is a wide bandgap semiconductor
material that can be used to create heterostructures when combined with other
semiconductor materials, such as InAs. These heterostructures can be host to
quantum wells and quantum dots, which makes them valuable for quantum
computing and photonics technology. Due to the heterovalent nature of the
interface, a better understanding of the electronic properties is necessary. Our
research explores how ZnTe shell coatings influence the mobility of InAs nanowires.
Our analysis will include TEM results showing lattice structure and thickness of ZnTe
shells.
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Presenters
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Mykola Chernyashevskyy
- University of Pittsburgh