MBE Growth and Characterization of Thin Films of the Axion Insulator Candidate EuIn<sub>2</sub>As<sub>2</sub>
ORAL
Abstract
EuIn2As2 is an antiferromagnetic topological material theoretically predicted to host the axion insulator state.[1] While these states have been theoretically proposed, their experimental realization is still actively being pursued. In this work, we have successfully developed a molecular beam epitaxy growth scheme for c-axis oriented EuIn2As2 thin films and identified a high temperature regime necessary to stabilize the Zintl phase of the material. Magnetometry studies on our films reproduce characteristic magnetic properties of bulk single crystals of EuIn2As2.[2] The films exhibit the expected (ab)-plane magnetic easy axis and a Neel temperature close to 16 K. Magnetotransport measurements show our films are p-type with charge carrier densities varying between (3.7 - 7.5)×1019 cm-3 comparable to that of bulk crystals.[3] Successfully synthesizing thin films of EuIn2As2 serves as a vital step towards the realization of its predicted topological properties.
*Work supported by NSF-DMR-1905277. Work at the NHMFL is supported by NSF Cooperative Agreement No. DMR-2128556 and the State of Florida.
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Publication: M. Abdul Karim et al., Molecular beam epitaxy growth of axion insulator candidate EuIn2As2, Phys. Rev. Mater. 7, 104202 (2023)
Presenters
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Muhsin Abdul Karim
- Department of Physics and Astronomy, University of Notre Dame
- University of Notre Dame