Characterizing disorder in surface InAs heterostructures

Two-dimensional superconductor-semiconductor hybrid heterostructures have been utilized in a range of quantum devices, from voltage tunable gatemon qubits to realization of topological phases. In recent years, it has become increasingly clear that the presence of disorder in these structures can result in spurious results in experiments involving them. We aim to study the effect of disorder by correlating transport properties with observing the critical density at which the system undergoes an apparent metal to insulator transition. We discuss strategies for improved material growth and sample nanofabrication.