Resonant tunneling in monolayer WSe<sub>2</sub>/graphene/h-BN/graphene junctions

ORAL

Abstract

When graphene is placed on a monolayer transition metal dichalcogenide (TMD), spin splitting in the graphene band greatly enhances due to the proximity effect of spin-orbit interaction from the TMD layer. Here, we report the resonant tunneling in monolayer WSe2/graphene/thin h-BN/graphene junctions, where one of the graphene layers is placed on monolayer WSe2 with a twist angle of ~15° and the twist angle between the two graphene layers is controlled around 0.5° through the thin h-BN barrier. In low temperature tunneling transport measurements (T ~ 1.5 K), we observed energy and momentum conserved coherent resonant tunneling between the bands of two graphene layers due to the small twist angle. The differential conductance shows splitted peak structures likely due to the spin splitted band of the graphene on WSe2. Comparing the experimental results with theoretical calculation, we estimated the magnitude of spin splitting in the graphene/WSe2 is about ~20 meV which is consistent with previous experimental researches. Our results indicate coherent resonant tunneling can be a good way to study the proximity effect in graphene on various materials including TMDs.

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Presenters

  • Yuta Seo

    • Institute of Industrial Science, University of Tokyo

Authors

  • Yuta Seo

    • Institute of Industrial Science, University of Tokyo

  • Jimpei Kawase

    • Institute of Industrial Science, University of Tokyo

  • Momoko Onodera

    • Institute of Industrial Science, University of Tokyo

  • Rai Moriya

    • Institute of Industrial Science, University of Tokyo

  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science

  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science

  • Tomoki Machida

    • Univ of Tokyo
    • Institute of Industrial Science, University of Tokyo