Field-stabilized Chern insulator and possible nematicity in magic-angle Helical trilayer graphene

ORAL

Abstract

Helical trilayer graphene (HTG) consists of three layers of graphene with successive layers twisted by the same relative angle, resulting in two moire patterns with different orientations. Although HTG is globally C2z-symmetric, lattice relaxations form large periodic domains where C2z is broken on the moire scale, resulting in a spatial mosaic of Chern domains. Because domains have valley-contrasting Chern numbers, a network of topological gapless 1D states forms at their boundaries. When the graphene layers are twisted at a magic angle of 1.8 degrees, these topological bands become flat and a rich phase diagram of correlated states emerges, as was recently uncovered.

Here, we will explore new physics in HTG that arise in finite fields. First, we discuss a special scenario where the network of gapless edge states is no longer topologically protected, leading to the apparent formation of a robustly quantized field-induced Chern insulator. Second, we discuss evidence of possible nematic order at specific integer filling states. These additional findings further highlight HTG as a platform for exploring both strongly correlated and topological phases.

Presenters

  • Aaron L Sharpe

    • Stanford University
    • Sandia National Laboratories

Authors

  • Aaron L Sharpe

    • Stanford University
    • Sandia National Laboratories
  • Liqiao Xia

    • Massachusetts Institute of Technology
  • Aviram Uri

    • Massachusetts Institute of Technology
    • MIT
  • Sergio C de la Barrera

    • Massachusetts Institute of Technology MI
  • Yves Hon H Kwan

    • Princeton University
  • Rupini Kamat

    • Stanford Institute for Materials and Energy Sciences, Stanford University Physics Department
    • Stanford University
  • Ziyan Zhu

    • Stanford University
  • Julian May-Mann

    • University of Illinois at Urbana-Champai
    • Stanford
  • Kenji Watanabe

    • National Institute for Materials Science
    • NIMS
    • Research Center for Electronic and Optical Materials, National Institute for Materials Science
    • Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
  • Takashi Taniguchi

    • Kyoto Univ
    • National Institute for Materials Science
    • Research Center for Materials Nanoarchitectonics
    • Research Center for Materials Nanoarchitectonics, National Institute for Materials Science
    • National Institute for Materials Sciences
    • NIMS
    • International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science
    • International Center for Materials Nanoarchitectonics, NIMS, Japan
    • International Center for Materials Nanoarchitectonics, Tsukuba
    • National Institue for Materials Science
    • Kyoto University
    • National Institute of Materials Science
    • International Center for Materials Nanoarchitectonics and National Institute for Materials Science
  • Marc Kastner

    • Stanford University
    • Stanford Institute for Materials and Energy Sciences, Stanford University Physics Department, Massachusetts Institute of Technology Physics Department
    • Stanford Univ
  • David Goldhaber-Gordon

    • Stanford University
    • Stanford Institute for Materials and Energy Sciences, Stanford University Physics Department
    • Department of Physics, Stanford University, Stanford, California
    • Stanford Institute for Materials & Energy Sciences, Stanford University
  • Liang Fu

    • Massachusetts Institute of Technology MI
    • Massachusetts Institute of Technology
    • MIT
  • Trithep Devakul

    • Stanford University
  • Pablo Jarillo-Herrero

    • Massachusetts Institute of Technology MI
    • Massachusetts Institute of Technology MIT
    • Massachusetts Institute of Technology